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Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers / Thierry Maffeis

Journal of Applied Physics

Swansea University Author: Thierry Maffeis

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DOI (Published version): 10.1063/1.2888522

Published in: Journal of Applied Physics
Published: 2008
URI: https://cronfa.swan.ac.uk/Record/cronfa5692
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Item Description: This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers.
College: College of Engineering