No Cover Image

Book 228 views

Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers / Thierry Maffeis

Journal of Applied Physics

Swansea University Author: Thierry Maffeis

Full text not available from this repository: check for access using links below.

DOI (Published version): 10.1063/1.2888522

Published in: Journal of Applied Physics
Published: 2008
Tags: Add Tag
No Tags, Be the first to tag this record!
Item Description: This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers.
College: College of Engineering