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Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers

Thierry Maffeis Orcid Logo

Journal of Applied Physics

Swansea University Author: Thierry Maffeis Orcid Logo

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DOI (Published version): 10.1063/1.2888522

Published in: Journal of Applied Physics
Published: 2008
URI: https://cronfa.swan.ac.uk/Record/cronfa5692
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first_indexed 2013-07-23T11:53:26Z
last_indexed 2018-02-09T04:32:21Z
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2013-09-04T14:51:19.7656383</datestamp><bib-version>v2</bib-version><id>5692</id><entry>2013-09-03</entry><title>Ni&#x2215;Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers</title><swanseaauthors><author><sid>992eb4cb18b61c0cd3da6e0215ac787c</sid><ORCID>0000-0003-2357-0092</ORCID><firstname>Thierry</firstname><surname>Maffeis</surname><name>Thierry Maffeis</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Book</type><journal>Journal of Applied Physics</journal><volume></volume><journalNumber></journalNumber><paginationStart/><paginationEnd/><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2008</publishedYear><publishedDate>2008-12-31</publishedDate><doi>10.1063/1.2888522</doi><url/><notes>This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-09-04T14:51:19.7656383</lastEdited><Created>2013-09-03T06:17:14.0000000</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Thierry</firstname><surname>Maffeis</surname><orcid>0000-0003-2357-0092</orcid><order>1</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2013-09-04T14:51:19.7656383 v2 5692 2013-09-03 Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 2013-09-03 EEEG Book Journal of Applied Physics 31 12 2008 2008-12-31 10.1063/1.2888522 This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-09-04T14:51:19.7656383 2013-09-03T06:17:14.0000000 College of Engineering Engineering Thierry Maffeis 0000-0003-2357-0092 1
title Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
spellingShingle Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Thierry Maffeis
title_short Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_full Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_fullStr Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_full_unstemmed Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
title_sort Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
author_id_str_mv 992eb4cb18b61c0cd3da6e0215ac787c
author_id_fullname_str_mv 992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis
author Thierry Maffeis
author2 Thierry Maffeis
format Book
container_title Journal of Applied Physics
publishDate 2008
institution Swansea University
doi_str_mv 10.1063/1.2888522
college_str College of Engineering
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hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
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published_date 2008-12-31T03:19:19Z
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