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Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
Thierry Maffeis 
Journal of Applied Physics
Swansea University Author:
Thierry Maffeis
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DOI (Published version): 10.1063/1.2888522
Abstract
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers
| Published in: | Journal of Applied Physics |
|---|---|
| Published: |
2008
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5692 |
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2013-07-23T11:53:26Z |
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2018-02-09T04:32:21Z |
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<?xml version="1.0"?><rfc1807><datestamp>2013-09-04T14:51:19.7656383</datestamp><bib-version>v2</bib-version><id>5692</id><entry>2013-09-03</entry><title>Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers</title><swanseaauthors><author><sid>992eb4cb18b61c0cd3da6e0215ac787c</sid><ORCID>0000-0003-2357-0092</ORCID><firstname>Thierry</firstname><surname>Maffeis</surname><name>Thierry Maffeis</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Book</type><journal>Journal of Applied Physics</journal><volume></volume><journalNumber></journalNumber><paginationStart/><paginationEnd/><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2008</publishedYear><publishedDate>2008-12-31</publishedDate><doi>10.1063/1.2888522</doi><url/><notes>This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers.</notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-09-04T14:51:19.7656383</lastEdited><Created>2013-09-03T06:17:14.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Thierry</firstname><surname>Maffeis</surname><orcid>0000-0003-2357-0092</orcid><order>1</order></author></authors><documents/><OutputDurs/></rfc1807> |
| spelling |
2013-09-04T14:51:19.7656383 v2 5692 2013-09-03 Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers 992eb4cb18b61c0cd3da6e0215ac787c 0000-0003-2357-0092 Thierry Maffeis Thierry Maffeis true false 2013-09-03 EEEG Book Journal of Applied Physics 31 12 2008 2008-12-31 10.1063/1.2888522 This article, published in one of the best applied physics journal (impact factor 2.24 in 2008) describes the formation of metal contacts to AlGaN, a wide band gap semiconductor used in optoelectronics and microelectronics. It is very relevant for the fabrication of any device based on AlGaN such as high speed transistors or blue LEDs and Lasers. COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-09-04T14:51:19.7656383 2013-09-03T06:17:14.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Thierry Maffeis 0000-0003-2357-0092 1 |
| title |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers |
| spellingShingle |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers Thierry Maffeis |
| title_short |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers |
| title_full |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers |
| title_fullStr |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers |
| title_full_unstemmed |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers |
| title_sort |
Ni∕Al[sub 0.2]Ga[sub 0.8]N interfacial reaction and Schottky contact formation using high quality epitaxial layers |
| author_id_str_mv |
992eb4cb18b61c0cd3da6e0215ac787c |
| author_id_fullname_str_mv |
992eb4cb18b61c0cd3da6e0215ac787c_***_Thierry Maffeis |
| author |
Thierry Maffeis |
| author2 |
Thierry Maffeis |
| format |
Book |
| container_title |
Journal of Applied Physics |
| publishDate |
2008 |
| institution |
Swansea University |
| doi_str_mv |
10.1063/1.2888522 |
| college_str |
Faculty of Science and Engineering |
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|
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facultyofscienceandengineering |
| hierarchy_top_title |
Faculty of Science and Engineering |
| hierarchy_parent_id |
facultyofscienceandengineering |
| hierarchy_parent_title |
Faculty of Science and Engineering |
| department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
| document_store_str |
0 |
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0 |
| published_date |
2008-12-31T03:06:52Z |
| _version_ |
1763749724532244480 |
| score |
11.012678 |