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Control of roughness at interfaces and the impact on charge mobility in all-polymer field-effect transistors

Shion Seng Chang, Ana B Rodríguez, Anthony Higgins Orcid Logo, Chuan Liu, Mark Geoghegan, Henning Sirringhaus, Fabrice Cousin, Robert M Dalgleish, Yvonne Deng

Soft Matter, Volume: 4, Issue: 11, Pages: 2220 - 2224

Swansea University Author: Anthony Higgins Orcid Logo

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DOI (Published version): 10.1039/b810278c

Published in: Soft Matter
ISSN: 1744-683X 1744-6848
Published: 2008
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Item Description: This project was a collaboration with Prof H. Sirringhaus FRS (Physics, Cambridge) and was led by A. M. Higgins. This project involved structural studies in Swansea/central facilities (funded by STFC PI A. M. Higgins) and electronic device fabrication/characterisation in Cambridge. The work used a novel methodology to control interfacial roughness via solvent quality, and demonstrated the influence of roughness on charge mobility at a buried all-polymer semiconducting/dielectric interface within a field-effect transistor.
College: Faculty of Science and Engineering
Issue: 11
Start Page: 2220
End Page: 2224