No Cover Image

Journal article 766 views

Control of roughness at interfaces and the impact on charge mobility in all-polymer field-effect transistors

Shion Seng Chang, Ana B Rodríguez, Anthony Higgins Orcid Logo, Chuan Liu, Mark Geoghegan, Henning Sirringhaus, Fabrice Cousin, Robert M Dalgleish, Yvonne Deng

Soft Matter, Volume: 4, Issue: 11, Pages: 2220 - 2224

Swansea University Author: Anthony Higgins Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1039/b810278c

Published in: Soft Matter
ISSN: 1744-683X 1744-6848
Published: 2008
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa5781
Tags: Add Tag
No Tags, Be the first to tag this record!
Item Description: This project was a collaboration with Prof H. Sirringhaus FRS (Physics, Cambridge) and was led by A. M. Higgins. This project involved structural studies in Swansea/central facilities (funded by STFC PI A. M. Higgins) and electronic device fabrication/characterisation in Cambridge. The work used a novel methodology to control interfacial roughness via solvent quality, and demonstrated the influence of roughness on charge mobility at a buried all-polymer semiconducting/dielectric interface within a field-effect transistor.
College: College of Engineering
Issue: 11
Start Page: 2220
End Page: 2224