No Cover Image

Journal article 391 views 98 downloads

Large-area SnTe nanofilm: preparation and its broadband photodetector with ultra-low dark current

Liyuan Song, Libin Tang, Qun Hao, Chunli Yang, Vincent Teng Orcid Logo, Haipeng Wang, Biao Yue, Junbin Li, Hong Wei

Optics Express, Volume: 30, Issue: 9, Start page: 14828

Swansea University Author: Vincent Teng Orcid Logo

  • 59748.pdf

    PDF | Version of Record

    © 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for noncommercial purposes and appropriate attribution is maintained. All other rights are reserved.

    Download (3.91MB)

Check full text

DOI (Published version): 10.1364/oe.454587

Abstract

Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe...

Full description

Published in: Optics Express
ISSN: 1094-4087
Published: Optica Publishing Group 2022
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa59748
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: Photodetectors are receiving increasing attention because of their widely important applications. Therefore, developing broadband high-performance photodetectors using new materials that can function at room temperature has become increasingly important. As a functional material, tin telluride (SnTe), has been widely studied as a thermoelectric material. Furthermore, because of its narrow bandgap, it can be used as a novel infrared photodetector material. In this study, a large-area SnTe nanofilm with controllable thickness was deposited onto a quartz substrate using magnetron sputtering and was used to fabricate a photodetector. The device exhibited a photoelectric response over a broad spectral range of 400-1050 nm. In the near-infrared band of 940 nm, the detectivity (D*) and responsivity (R) of the photodetector were 3.46×1011 cmHz1/2w-1 and 1.71 A/W, respectively, at an optical power density of 0.2 mWcm-2. As the thickness of the SnTe nanofilm increased, a transition from semiconducting to metallic properties was experimentally observed for the first time. The large-area (2.5cm × 2.5cm) high-performance nanofilms show important potential for application in infrared focal plane array (FPA) detectors.
College: Faculty of Science and Engineering
Funders: National Key Research and Development Program of China (2019YFB2203404); National Natural Science Foundation of China (11864044).
Issue: 9
Start Page: 14828