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Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors

Natalia Seoane Orcid Logo, Karol Kalna Orcid Logo, Xavier Cartoixa Orcid Logo, Antonio Garcia-Loureiro Orcid Logo

IEEE Transactions on Electron Devices, Volume: 69, Issue: 9, Pages: 5276 - 5282

Swansea University Author: Karol Kalna Orcid Logo

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Abstract

Three silicon nanowire (SiNW) field effect transistors (FETs) with 15 -, 12.5 -and 10.6 -nm gate lengths are simulated using hierarchical multilevel quantum and semiclassical models verified against experimental ID – VG characteristics. The tight-binding (TB) formalism is employed to obtain the band...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: Institute of Electrical and Electronics Engineers (IEEE) 2022
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa60692
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Abstract: Three silicon nanowire (SiNW) field effect transistors (FETs) with 15 -, 12.5 -and 10.6 -nm gate lengths are simulated using hierarchical multilevel quantum and semiclassical models verified against experimental ID – VG characteristics. The tight-binding (TB) formalism is employed to obtain the band structure in k -space of ellipsoidal NWs to extract electron effective masses. The masses are transferred into quantum-corrected 3-D finite element (FE) drift-diffusion (DD) and ensemble Monte Carlo (MC) simulations, which accurately capture the quantum-mechanical confinement of the ellipsoidal NW cross sections. We demonstrate that the accurate parameterization of the bandstructure and the quantum-mechanical confinement has a profound impact on the computed ID – VG characteristics of nanoscaled devices. Finally, we devise a step-by-step technology computer-aided design (TCAD) methodology of simple parameterization for efficient DD device simulations.
Keywords: Drift-diffusion (DD), Monte Carlo (MC), nanowire (NW), semiconductor device simulation, tight-binding (TB)
College: Faculty of Science and Engineering
Funders: The work of Natalia Seoane and Antonio García-Loureiro was supported by the Spain’s Ministerio de Ciencia e Innovación/Xunta de Galicia/ European Regional Development Fund, under Grant RYC-2017-23312, Grant PID2019-104834GB-I00, and Grant ED431F-2020/008. The work of Xavier Cartoixà was supported by the Spain’s Ministerio de Ciencia, Innovación y Universidades under Grant RTI2018-097876-B-C21 (MCIU/AEI/FEDER).
Issue: 9
Start Page: 5276
End Page: 5282