Journal article 559 views 59 downloads
Multilevel 3-D Device Simulation Approach Applied to Deeply Scaled Nanowire Field Effect Transistors
,
Karol Kalna ,
Xavier Cartoixa ,
Antonio Garcia-Loureiro
IEEE Transactions on Electron Devices, Volume: 69, Issue: 9, Pages: 5276 - 5282
Swansea University Author:
Karol Kalna
-
PDF | Version of Record
This work is licensed under a Creative Commons Attribution 4.0 License
Download (1.39MB)
DOI (Published version): 10.1109/ted.2022.3188945
Abstract
Three silicon nanowire (SiNW) field effect transistors (FETs) with 15 -, 12.5 -and 10.6 -nm gate lengths are simulated using hierarchical multilevel quantum and semiclassical models verified against experimental ID – VG characteristics. The tight-binding (TB) formalism is employed to obtain the band...
| Published in: | IEEE Transactions on Electron Devices |
|---|---|
| ISSN: | 0018-9383 1557-9646 |
| Published: |
Institute of Electrical and Electronics Engineers (IEEE)
2022
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa60692 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Abstract: |
Three silicon nanowire (SiNW) field effect transistors (FETs) with 15 -, 12.5 -and 10.6 -nm gate lengths are simulated using hierarchical multilevel quantum and semiclassical models verified against experimental ID – VG characteristics. The tight-binding (TB) formalism is employed to obtain the band structure in k -space of ellipsoidal NWs to extract electron effective masses. The masses are transferred into quantum-corrected 3-D finite element (FE) drift-diffusion (DD) and ensemble Monte Carlo (MC) simulations, which accurately capture the quantum-mechanical confinement of the ellipsoidal NW cross sections. We demonstrate that the accurate parameterization of the bandstructure and the quantum-mechanical confinement has a profound impact on the computed ID – VG characteristics of nanoscaled devices. Finally, we devise a step-by-step technology computer-aided design (TCAD) methodology of simple parameterization for efficient DD device simulations. |
|---|---|
| Keywords: |
Drift-diffusion (DD), Monte Carlo (MC), nanowire (NW), semiconductor device simulation, tight-binding (TB) |
| College: |
Faculty of Science and Engineering |
| Funders: |
The work of Natalia Seoane and Antonio García-Loureiro was supported by the Spain’s Ministerio de
Ciencia e Innovación/Xunta de Galicia/ European Regional Development Fund, under Grant RYC-2017-23312, Grant PID2019-104834GB-I00, and Grant ED431F-2020/008. The work of Xavier Cartoixà was supported by the Spain’s Ministerio de Ciencia, Innovación y Universidades under Grant RTI2018-097876-B-C21 (MCIU/AEI/FEDER). |
| Issue: |
9 |
| Start Page: |
5276 |
| End Page: |
5282 |