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Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study

Karol Kalna Orcid Logo, Antonio Martinez Muniz Orcid Logo

IEEE Transactions on Nanotechnology

Swansea University Authors: Karol Kalna Orcid Logo, Antonio Martinez Muniz Orcid Logo

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DOI (Published version): 10.1109/TNANO.2008.917776

Published in: IEEE Transactions on Nanotechnology
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa6070
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first_indexed 2013-07-23T11:56:07Z
last_indexed 2018-02-09T04:33:13Z
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spelling 2011-10-01T00:00:00.0000000 v2 6070 2013-09-03 Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 2013-09-03 EEEG Journal Article IEEE Transactions on Nanotechnology 31 12 2009 2009-12-31 10.1109/TNANO.2008.917776 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2011-10-01T00:00:00.0000000 2013-09-03T06:36:05.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Karol Kalna 0000-0002-6333-9189 1 Antonio Martinez Muniz 0000-0001-8131-7242 2
title Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
spellingShingle Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
Karol Kalna
Antonio Martinez Muniz
title_short Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_full Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_fullStr Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_full_unstemmed Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
title_sort Impact of Body-Thickness-Dependent Band Structure on Scaling of Double-Gate MOSFETs: A DFT/NEGF Study
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
cd433784251add853672979313f838ec
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
author Karol Kalna
Antonio Martinez Muniz
author2 Karol Kalna
Antonio Martinez Muniz
format Journal article
container_title IEEE Transactions on Nanotechnology
publishDate 2009
institution Swansea University
doi_str_mv 10.1109/TNANO.2008.917776
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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published_date 2009-12-31T03:08:54Z
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score 10.927009