High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector

Shang, Guoxin; Tang, Libin; Wu, Gang; Yuan, Shouzhang; Jia, Menghan; Guo, Xiaopeng; Zheng, Xin; Wang, Wei; Yue, Biao; Teng, Vincent

doi:10.3390/s23052741

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High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector

Guoxin Shang, Libin Tang, Gang Wu, Shouzhang Yuan, Menghan Jia, Xiaopeng Guo, Xin Zheng, Wei Wang, Biao Yue, Vincent Teng

Sensors, Volume: 23, Issue: 5, Start page: 2741

Swansea University Author: Vincent Teng

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2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
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DOI (Published version): 10.3390/s23052741

Abstract

The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heter...

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Published in:	Sensors
ISSN:	1424-8220
Published:	MDPI AG 2023
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spelling	2023-04-18T16:43:21.0655421 v2 62776 2023-03-02 High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector 98f529f56798da1ba3e6e93d2817c114 0000-0003-4325-8573 Vincent Teng Vincent Teng true false 2023-03-02 EEEG The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications. Journal Article Sensors 23 5 2741 MDPI AG 1424-8220 NiO; TiO2; ZnO; heterojunction; UV detector 2 3 2023 2023-03-02 10.3390/s23052741 http://dx.doi.org/10.3390/s23052741 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University This research was funded by the Yunnan Province Innovation Team Project (Grant No. 2018HC020) and National Key Research and Development Program of China (Grant No. 2019YFB2203404). 2023-04-18T16:43:21.0655421 2023-03-02T10:11:17.7591054 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Guoxin Shang 1 Libin Tang 2 Gang Wu 3 Shouzhang Yuan 4 Menghan Jia 5 Xiaopeng Guo 6 Xin Zheng 7 Wei Wang 8 Biao Yue 9 Vincent Teng 0000-0003-4325-8573 10 62776__26724__e3f74102f0aa41e482782aff0e1557e7.pdf 62776.pdf 2023-03-02T10:17:45.1486763 Output 8980740 application/pdf Version of Record true 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). true eng https://creativecommons.org/licenses/by/4.0/
title	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector
spellingShingle	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector Vincent Teng
title_short	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector
title_full	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector
title_fullStr	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector
title_full_unstemmed	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector
title_sort	High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector
author_id_str_mv	98f529f56798da1ba3e6e93d2817c114
author_id_fullname_str_mv	98f529f56798da1ba3e6e93d2817c114_***_Vincent Teng
author	Vincent Teng
author2	Guoxin Shang Libin Tang Gang Wu Shouzhang Yuan Menghan Jia Xiaopeng Guo Xin Zheng Wei Wang Biao Yue Vincent Teng
format	Journal article
container_title	Sensors
container_volume	23
container_issue	5
container_start_page	2741
publishDate	2023
institution	Swansea University
issn	1424-8220
doi_str_mv	10.3390/s23052741
publisher	MDPI AG
college_str	Faculty of Science and Engineering
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hierarchy_top_title	Faculty of Science and Engineering
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department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url	http://dx.doi.org/10.3390/s23052741
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description	The ultraviolet (UV) photodetector has found many applications, ranging from optical communication to environmental monitoring. There has been much research interest in the development of metal oxide-based UV photodetectors. In this work, a nano-interlayer was introduced in a metal oxide-based heterojunction UV photodetector to enhance the rectification characteristics and therefore the device performance. The device, which consists of nickel oxide (NiO) and zinc oxide (ZnO) sandwiching an ultrathin dielectric layer of titanium dioxide (TiO2), was prepared by radio frequency magnetron sputtering (RFMS). After annealing, the NiO/TiO2/ZnO UV photodetector exhibited a rectification ratio of 104 under UV irradiation of 365 nm at zero bias. The device also demonstrated a high responsivity of 291 A/W and a detectivity of 6.9 × 1011 Jones at +2 V bias. Such a device structure provides a promising future for metal oxide-based heterojunction UV photodetectors in a wide range of applications.
published_date	2023-03-02T04:23:08Z
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High-Performance NiO/TiO2/ZnO Photovoltaic UV Detector

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