No Cover Image

Journal article 317 views

Polarization-driven high Rabi frequency of piezotronic valley transistors

Ruhao Liu, Yaming Zhang, Yuankai Zhou, Jiaheng Nie, Lijie Li Orcid Logo, Yan Zhang Orcid Logo

Nano Energy, Volume: 113, Start page: 108550

Swansea University Author: Lijie Li Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1016/j.nanoen.2023.108550

Abstract

The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times highe...

Full description

Published in: Nano Energy
ISSN: 2211-2855 2211-3282
Published: Elsevier BV 2023
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa63521
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors.
Keywords: Piezotronics, Spintronics, Valleytronics, Monolayer transition metal dichalcogenides, Valley qubit
College: Faculty of Science and Engineering
Funders: The authors are thankful for the support from Major Project of National Natural Science Foundation of China (Grant No. 52192612, 52192610). The authors are thankful for the support from University of Electronic Science and Technology of China (grant no. ZYGX2021YGCX001).
Start Page: 108550

Similar Items