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Polarization-driven high Rabi frequency of piezotronic valley transistors
Nano Energy, Volume: 113, Start page: 108550
Swansea University Author: Lijie Li
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DOI (Published version): 10.1016/j.nanoen.2023.108550
Abstract
The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times highe...
Published in: | Nano Energy |
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ISSN: | 2211-2855 2211-3282 |
Published: |
Elsevier BV
2023
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Online Access: |
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URI: | https://cronfa.swan.ac.uk/Record/cronfa63521 |
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Abstract: |
The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors. |
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Keywords: |
Piezotronics, Spintronics, Valleytronics, Monolayer transition metal dichalcogenides, Valley qubit |
College: |
Faculty of Science and Engineering |
Funders: |
The authors are thankful for the support from Major Project of National Natural Science Foundation of China (Grant No. 52192612, 52192610). The authors are thankful for the support from University of Electronic Science and Technology of China (grant no. ZYGX2021YGCX001). |
Start Page: |
108550 |