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Polarization-driven high Rabi frequency of piezotronic valley transistors

Ruhao Liu, Yaming Zhang, Yuankai Zhou, Jiaheng Nie, Lijie Li Orcid Logo, Yan Zhang Orcid Logo

Nano Energy, Volume: 113, Start page: 108550

Swansea University Author: Lijie Li Orcid Logo

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DOI (Published version): 10.1016/j.nanoen.2023.108550

Abstract

The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times highe...

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Published in: Nano Energy
ISSN: 2211-2855 2211-3282
Published: Elsevier BV 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa63521
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first_indexed 2023-05-23T10:16:35Z
last_indexed 2023-05-23T10:16:35Z
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spelling v2 63521 2023-05-23 Polarization-driven high Rabi frequency of piezotronic valley transistors ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false 2023-05-23 EEEG The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors. Journal Article Nano Energy 113 108550 Elsevier BV 2211-2855 2211-3282 Piezotronics, Spintronics, Valleytronics, Monolayer transition metal dichalcogenides, Valley qubit 31 8 2023 2023-08-31 10.1016/j.nanoen.2023.108550 http://dx.doi.org/10.1016/j.nanoen.2023.108550 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University The authors are thankful for the support from Major Project of National Natural Science Foundation of China (Grant No. 52192612, 52192610). The authors are thankful for the support from University of Electronic Science and Technology of China (grant no. ZYGX2021YGCX001). 2023-07-26T16:07:16.1802259 2023-05-23T11:09:38.4179647 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ruhao Liu 1 Yaming Zhang 2 Yuankai Zhou 3 Jiaheng Nie 4 Lijie Li 0000-0003-4630-7692 5 Yan Zhang 0000-0002-7329-0382 6 Under embargo Under embargo 2023-06-19T10:07:37.7923263 Output 2335451 application/pdf Accepted Manuscript true 2024-05-22T00:00:00.0000000 Distributed under the terms of a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International Licence (CC BY-NC-ND 4.0). true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title Polarization-driven high Rabi frequency of piezotronic valley transistors
spellingShingle Polarization-driven high Rabi frequency of piezotronic valley transistors
Lijie Li
title_short Polarization-driven high Rabi frequency of piezotronic valley transistors
title_full Polarization-driven high Rabi frequency of piezotronic valley transistors
title_fullStr Polarization-driven high Rabi frequency of piezotronic valley transistors
title_full_unstemmed Polarization-driven high Rabi frequency of piezotronic valley transistors
title_sort Polarization-driven high Rabi frequency of piezotronic valley transistors
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
author Lijie Li
author2 Ruhao Liu
Yaming Zhang
Yuankai Zhou
Jiaheng Nie
Lijie Li
Yan Zhang
format Journal article
container_title Nano Energy
container_volume 113
container_start_page 108550
publishDate 2023
institution Swansea University
issn 2211-2855
2211-3282
doi_str_mv 10.1016/j.nanoen.2023.108550
publisher Elsevier BV
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://dx.doi.org/10.1016/j.nanoen.2023.108550
document_store_str 0
active_str 0
description The properties of spin and valley transport of piezotronics valley transistor is studied based on a normal/ferromagnetic/normal (NFN) structure of monolayer (ML) transition metal dichalcogenides (TMDs). Rabi frequency reach up to 4200 MHz based on piezotronics effect, which is about 1000 times higher than that of ZnO/CdO quantum well devices. Strain-induced strong polarization can control properties of spin and valley transport in piezo-phototronic transistor. The strong polarization can be applied on the modulation of the valley qubit. The spin and valley conductance and the spin and valley polarizability are calculated theoretically. The strong polarization can be applied on the manipulation of valley qubit, which paves a new way to quantum computing applications based on piezotronic valley transistors.
published_date 2023-08-31T16:06:30Z
_version_ 1772496083628326912
score 11.016258

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