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The thermal stability of epitaxial GeSn layers
APL Materials, Volume: 6, Issue: 7, Start page: 076108
Swansea University Author: Yaonan Hou
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DOI (Published version): 10.1063/1.5036728
Abstract
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by...
| Published in: | APL Materials |
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| ISSN: | 2166-532X |
| Published: |
AIP Publishing
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa65296 |
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| Abstract: |
We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed. |
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| College: |
Faculty of Science and Engineering |
| Funders: |
The authors acknowledge financial support by the BMBF in frame of the M-ERA.NET project GESNAPHOTOandsupportbytheGermanResearchFoundation(DFG)throughtheproject“SiGeSn Laser for Silicon Photonics.” |
| Issue: |
7 |
| Start Page: |
076108 |