Journal article 44 views
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
Yaonan Hou,
Makhayeni Mtunzi 
,
Hui Jia ,
Yaonan Hou,
Xueying Yu,
Haotian Zeng,
Junjie Yang,
Xingzhao Yan,
Ilias Skandalos,
Huiwen Deng,
Jae-Seong Park,
Wei Li ,
Ang Li,
Khalil El Hajraoui,
Quentin Ramasse,
Frederic Gardes,
Mingchu Tang,
Siming Chen ,
Alwyn Seeds,
Huiyun Liu
,
Hui Jia ,
Yaonan Hou,
Xueying Yu,
Haotian Zeng,
Junjie Yang,
Xingzhao Yan,
Ilias Skandalos,
Huiwen Deng,
Jae-Seong Park,
Wei Li ,
Ang Li,
Khalil El Hajraoui,
Quentin Ramasse,
Frederic Gardes,
Mingchu Tang,
Siming Chen ,
Alwyn Seeds,
Huiyun Liu
Journal of Physics D: Applied Physics, Volume: 57, Issue: 25, Start page: 255101
Swansea University Author: Yaonan Hou
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1088/1361-6463/ad31e0
Abstract
High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
| Published in: | Journal of Physics D: Applied Physics |
|---|---|
| ISSN: | 0022-3727 1361-6463 |
| Published: |
IOP Publishing
2024
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa67691 |
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| College: |
College of Engineering |
|---|---|
| Funders: |
epsrc |
| Issue: |
25 |
| Start Page: |
255101 |