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High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy

Yaonan Hou, Makhayeni Mtunzi Orcid Logo, Hui Jia Orcid Logo, Yaonan Hou, Xueying Yu, Haotian Zeng, Junjie Yang, Xingzhao Yan, Ilias Skandalos, Huiwen Deng, Jae-Seong Park, Wei Li Orcid Logo, Ang Li, Khalil El Hajraoui, Quentin Ramasse, Frederic Gardes, Mingchu Tang, Siming Chen Orcid Logo, Alwyn Seeds, Huiyun Liu Orcid Logo

Journal of Physics D: Applied Physics, Volume: 57, Issue: 25, Start page: 255101

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1088/1361-6463/ad31e0

Published in: Journal of Physics D: Applied Physics
ISSN: 0022-3727 1361-6463
Published: IOP Publishing 2024
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa67691
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spelling v2 67691 2024-09-14 High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2024-09-14 ACEM Journal Article Journal of Physics D: Applied Physics 57 25 255101 IOP Publishing 0022-3727 1361-6463 28 6 2024 2024-06-28 10.1088/1361-6463/ad31e0 http://dx.doi.org/10.1088/1361-6463/ad31e0 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Not Required epsrc 2024-09-25T20:10:49.1044657 2024-09-14T10:13:39.9959069 College of Engineering Engineering Yaonan Hou 1 Makhayeni Mtunzi 0009-0000-3924-2726 2 Hui Jia 0000-0002-8325-3948 3 Yaonan Hou 4 Xueying Yu 5 Haotian Zeng 6 Junjie Yang 7 Xingzhao Yan 8 Ilias Skandalos 9 Huiwen Deng 10 Jae-Seong Park 11 Wei Li 0000-0002-7411-5519 12 Ang Li 13 Khalil El Hajraoui 14 Quentin Ramasse 15 Frederic Gardes 16 Mingchu Tang 17 Siming Chen 0000-0002-4361-0664 18 Alwyn Seeds 19 Huiyun Liu 0000-0002-7654-8553 20
title High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
spellingShingle High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
Yaonan Hou
title_short High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
title_full High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
title_fullStr High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
title_full_unstemmed High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
title_sort High-quality germanium growth on (111)-faceted V-groove silicon by molecular beam epitaxy
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Yaonan Hou
Makhayeni Mtunzi
Hui Jia
Yaonan Hou
Xueying Yu
Haotian Zeng
Junjie Yang
Xingzhao Yan
Ilias Skandalos
Huiwen Deng
Jae-Seong Park
Wei Li
Ang Li
Khalil El Hajraoui
Quentin Ramasse
Frederic Gardes
Mingchu Tang
Siming Chen
Alwyn Seeds
Huiyun Liu
format Journal article
container_title Journal of Physics D: Applied Physics
container_volume 57
container_issue 25
container_start_page 255101
publishDate 2024
institution Swansea University
issn 0022-3727
1361-6463
doi_str_mv 10.1088/1361-6463/ad31e0
publisher IOP Publishing
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
url http://dx.doi.org/10.1088/1361-6463/ad31e0
document_store_str 0
active_str 0
published_date 2024-06-28T20:10:47Z
_version_ 1811196356647190528
score 11.029921

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