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The thermal stability of epitaxial GeSn layers

P. Zaumseil, Yaonan Hou, M. A. Schubert, N. von den Driesch, D. Stange, D. Rainko, M. Virgilio, D. Buca, G. Capellini

APL Materials, Volume: 6, Issue: 7, Start page: 076108

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1063/1.5036728

Abstract

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by...

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Published in: APL Materials
ISSN: 2166-532X
Published: AIP Publishing 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa65296
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spelling v2 65296 2023-12-14 The thermal stability of epitaxial GeSn layers 113975f710084997abdb26ad5fa03e8e Yaonan Hou Yaonan Hou true false 2023-12-14 EEEG We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed. Journal Article APL Materials 6 7 076108 AIP Publishing 2166-532X 30 7 2018 2018-07-30 10.1063/1.5036728 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University Another institution paid the OA fee The authors acknowledge financial support by the BMBF in frame of the M-ERA.NET project GESNAPHOTOandsupportbytheGermanResearchFoundation(DFG)throughtheproject“SiGeSn Laser for Silicon Photonics.” 2024-04-09T15:00:34.1926698 2023-12-14T16:15:34.6672797 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering P. Zaumseil 1 Yaonan Hou 2 M. A. Schubert 3 N. von den Driesch 4 D. Stange 5 D. Rainko 6 M. Virgilio 7 D. Buca 8 G. Capellini 9 65296__29962__6267f976525c4b2ab68ad75cf88ab3e7.pdf 65296.VOR.pdf 2024-04-09T14:59:33.5117598 Output 3223671 application/pdf Version of Record true © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative CommonsAttribution (CC BY) license. true eng http://creativecommons.org/licenses/by/4.0/
title The thermal stability of epitaxial GeSn layers
spellingShingle The thermal stability of epitaxial GeSn layers
Yaonan Hou
title_short The thermal stability of epitaxial GeSn layers
title_full The thermal stability of epitaxial GeSn layers
title_fullStr The thermal stability of epitaxial GeSn layers
title_full_unstemmed The thermal stability of epitaxial GeSn layers
title_sort The thermal stability of epitaxial GeSn layers
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 P. Zaumseil
Yaonan Hou
M. A. Schubert
N. von den Driesch
D. Stange
D. Rainko
M. Virgilio
D. Buca
G. Capellini
format Journal article
container_title APL Materials
container_volume 6
container_issue 7
container_start_page 076108
publishDate 2018
institution Swansea University
issn 2166-532X
doi_str_mv 10.1063/1.5036728
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.
published_date 2018-07-30T15:00:30Z
_version_ 1795865948245196800
score 11.012678

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