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Indium-flush technique for C-band InAs/InP quantum dots
,
Calum Dear ,
Hui Jia ,
Jae-Seong Park ,
Yaonan Hou ,
Khalil El Hajraoui ,
Haotian Zeng ,
Huiwen Deng ,
Junjie Yang ,
Mingchu Tang ,
Siming Chen ,
Quentin M. Ramasse ,
Qiang Li ,
Alwyn Seeds ,
Huiyun Liu
APL Materials, Volume: 12, Issue: 12, Start page: 121109
Swansea University Author:
Yaonan Hou
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DOI (Published version): 10.1063/5.0239360
Abstract
High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF...
| Published in: | APL Materials |
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| ISSN: | 2166-532X |
| Published: |
AIP Publishing
2024
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa68577 |
| Abstract: |
High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy. |
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| College: |
Faculty of Science and Engineering |
| Funders: |
The authors acknowledge the support of UK Engineering and Physical Sciences Research Council under Project Nos. EP/X015300/1, EP/W002302/1, EP/V029606/1, EP/V029681/1, EP/T028475/1, EP/S024441/1, EP/Z532848/1, and EP/P006973/1. SuperSTEM is the U.K. National Research Facility for Advanced Electron Microscopy, supported by the Engineering and Physical Sciences Research Council (EPSRC, UK) via Grant Nos. EP/W021080/1 and EP/V036432/1. |
| Issue: |
12 |
| Start Page: |
121109 |