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The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

Calum Dear Orcid Logo, Jae-Seong Park Orcid Logo, Hui Jia Orcid Logo, Khalil El Hajraoui Orcid Logo, Jiajing Yuan, Yangqian Wang, Yaonan Hou Orcid Logo, Huiwen Deng, Qiang Li, Quentin M Ramasse, Alwyn Seeds, Mingchu Tang, Huiyun Liu Orcid Logo

Journal of Physics D: Applied Physics, Volume: 58, Issue: 12, Start page: 125104

Swansea University Author: Yaonan Hou Orcid Logo

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DOI (Published version): 10.1088/1361-6463/adabf1

Abstract

Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III–V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown on (001) InP substrate by molecular beam epitaxy. Samples cy...

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Published in: Journal of Physics D: Applied Physics
ISSN: 0022-3727 1361-6463
Published: IOP Publishing 2025
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URI: https://cronfa.swan.ac.uk/Record/cronfa68753
Abstract: Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III–V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown on (001) InP substrate by molecular beam epitaxy. Samples cyclically-annealed at 600 °C retain most of their as-grown optical, structural, and compositional characteristics whilst exhibiting a 4.6-fold increase in peak PL intensity. This strategy was successfully implemented in broad-area devices with improved slope efficiency and output power, demonstrating cyclic RTA as an effective method in enhancing high-performance 1.55 μm QD lasers on InP (001) substrates.
Keywords: quantum dots, rapid thermal annealing, molecular beam epitaxy
College: Faculty of Science and Engineering
Funders: This work was supported in part by Engineering and Physical Sciences Research Council (Grant Nos EP/V029681/1, EP/P006973/1, EP/S024441/1, EP/W021080/1, EP/V036432/1, EP/V029606/1, EP/Z532848/1, EP/T028475/1, EP/V036327/1, EP/V048732/1, and EP/X015300/1).
Issue: 12
Start Page: 125104

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