The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

Dear, Calum; Park, Jae-Seong; Jia, Hui; Hajraoui, Khalil El; Yuan, Jiajing; Wang, Yangqian; Hou, Yaonan; Deng, Huiwen; Li, Qiang; Ramasse, Quentin M; Seeds, Alwyn; Tang, Mingchu; Liu, Huiyun

doi:10.1088/1361-6463/adabf1

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The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

Calum Dear

, Jae-Seong Park

, Hui Jia

, Khalil El Hajraoui

, Jiajing Yuan, Yangqian Wang, Yaonan Hou

, Huiwen Deng, Qiang Li, Quentin M Ramasse, Alwyn Seeds, Mingchu Tang, Huiyun Liu

Journal of Physics D: Applied Physics, Volume: 58, Issue: 12, Start page: 125104

Swansea University Author: Yaonan Hou

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DOI (Published version): 10.1088/1361-6463/adabf1

Abstract

Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III–V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown on (001) InP substrate by molecular beam epitaxy. Samples cy...

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Published in:	Journal of Physics D: Applied Physics
ISSN:	0022-3727 1361-6463
Published:	IOP Publishing 2025
Online Access:	Check full text
URI:	https://cronfa.swan.ac.uk/Record/cronfa68753

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spelling	2025-01-29T12:35:49.0258908 v2 68753 2025-01-29 The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2025-01-29 ACEM Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III–V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown on (001) InP substrate by molecular beam epitaxy. Samples cyclically-annealed at 600 °C retain most of their as-grown optical, structural, and compositional characteristics whilst exhibiting a 4.6-fold increase in peak PL intensity. This strategy was successfully implemented in broad-area devices with improved slope efficiency and output power, demonstrating cyclic RTA as an effective method in enhancing high-performance 1.55 μm QD lasers on InP (001) substrates. Journal Article Journal of Physics D: Applied Physics 58 12 125104 IOP Publishing 0022-3727 1361-6463 quantum dots, rapid thermal annealing, molecular beam epitaxy 29 1 2025 2025-01-29 10.1088/1361-6463/adabf1 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee This work was supported in part by Engineering and Physical Sciences Research Council (Grant Nos EP/V029681/1, EP/P006973/1, EP/S024441/1, EP/W021080/1, EP/V036432/1, EP/V029606/1, EP/Z532848/1, EP/T028475/1, EP/V036327/1, EP/V048732/1, and EP/X015300/1). 2025-01-29T12:35:49.0258908 2025-01-29T12:28:27.6787881 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Calum Dear 0000-0003-1356-705X 1 Jae-Seong Park 0000-0002-6486-2342 2 Hui Jia 0000-0002-8325-3948 3 Khalil El Hajraoui 0000-0002-7627-6981 4 Jiajing Yuan 5 Yangqian Wang 6 Yaonan Hou 0000-0001-9461-3841 7 Huiwen Deng 8 Qiang Li 9 Quentin M Ramasse 10 Alwyn Seeds 11 Mingchu Tang 12 Huiyun Liu 0000-0002-7654-8553 13 68753__33433__3a96abe290574140b9fe399d3ccecb6e.pdf 68753.VOR.pdf 2025-01-29T12:32:05.6710430 Output 2796349 application/pdf Version of Record true © 2025 The Author(s). Original content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence (CC-BY 4.0). true eng https://creativecommons.org/licenses/by/4.0/
title	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
spellingShingle	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots Yaonan Hou
title_short	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
title_full	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
title_fullStr	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
title_full_unstemmed	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
title_sort	The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots
author_id_str_mv	113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv	113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author	Yaonan Hou
author2	Calum Dear Jae-Seong Park Hui Jia Khalil El Hajraoui Jiajing Yuan Yangqian Wang Yaonan Hou Huiwen Deng Qiang Li Quentin M Ramasse Alwyn Seeds Mingchu Tang Huiyun Liu
format	Journal article
container_title	Journal of Physics D: Applied Physics
container_volume	58
container_issue	12
container_start_page	125104
publishDate	2025
institution	Swansea University
issn	0022-3727 1361-6463
doi_str_mv	10.1088/1361-6463/adabf1
publisher	IOP Publishing
college_str	Faculty of Science and Engineering
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hierarchy_top_id	facultyofscienceandengineering
hierarchy_top_title	Faculty of Science and Engineering
hierarchy_parent_id	facultyofscienceandengineering
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department_str	School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
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description	Rapid thermal annealing (RTA) can be used as a post-growth method to adjust the optical properties of III–V materials. This work investigates the efficacy of applying cyclic RTA to 1.55 μm multi-layer InAs/InAlGaAs quantum dots (QDs) grown on (001) InP substrate by molecular beam epitaxy. Samples cyclically-annealed at 600 °C retain most of their as-grown optical, structural, and compositional characteristics whilst exhibiting a 4.6-fold increase in peak PL intensity. This strategy was successfully implemented in broad-area devices with improved slope efficiency and output power, demonstrating cyclic RTA as an effective method in enhancing high-performance 1.55 μm QD lasers on InP (001) substrates.
published_date	2025-01-29T12:18:51Z
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score	11.08895

The effect of rapid thermal annealing on 1.55 μm InAs/InP quantum dots

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