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Indium-flush technique for C-band InAs/InP quantum dots

Jiajing Yuan Orcid Logo, Calum Dear Orcid Logo, Hui Jia Orcid Logo, Jae-Seong Park Orcid Logo, Yaonan Hou Orcid Logo, Khalil El Hajraoui Orcid Logo, Haotian Zeng Orcid Logo, Huiwen Deng Orcid Logo, Junjie Yang Orcid Logo, Mingchu Tang Orcid Logo, Siming Chen Orcid Logo, Quentin M. Ramasse Orcid Logo, Qiang Li Orcid Logo, Alwyn Seeds Orcid Logo, Huiyun Liu Orcid Logo

APL Materials, Volume: 12, Issue: 12, Start page: 121109

Swansea University Author: Yaonan Hou Orcid Logo

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DOI (Published version): 10.1063/5.0239360

Abstract

High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (>1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF...

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Published in: APL Materials
ISSN: 2166-532X
Published: AIP Publishing 2024
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URI: https://cronfa.swan.ac.uk/Record/cronfa68577
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spelling 2025-01-30T13:12:45.1342309 v2 68577 2024-12-17 Indium-flush technique for C-band InAs/InP quantum dots 113975f710084997abdb26ad5fa03e8e 0000-0001-9461-3841 Yaonan Hou Yaonan Hou true false 2024-12-17 ACEM High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (&amp;gt;1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy. Journal Article APL Materials 12 12 121109 AIP Publishing 2166-532X 4 12 2024 2024-12-04 10.1063/5.0239360 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee The authors acknowledge the support of UK Engineering and Physical Sciences Research Council under Project Nos. EP/X015300/1, EP/W002302/1, EP/V029606/1, EP/V029681/1, EP/T028475/1, EP/S024441/1, EP/Z532848/1, and EP/P006973/1. SuperSTEM is the U.K. National Research Facility for Advanced Electron Microscopy, supported by the Engineering and Physical Sciences Research Council (EPSRC, UK) via Grant Nos. EP/W021080/1 and EP/V036432/1. 2025-01-30T13:12:45.1342309 2024-12-17T11:58:43.5292351 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Jiajing Yuan 0000-0001-9201-3535 1 Calum Dear 0000-0003-1356-705x 2 Hui Jia 0000-0002-8325-3948 3 Jae-Seong Park 0000-0002-6486-2342 4 Yaonan Hou 0000-0001-9461-3841 5 Khalil El Hajraoui 0000-0002-7627-6981 6 Haotian Zeng 0000-0002-7328-9576 7 Huiwen Deng 0000-0003-2680-152x 8 Junjie Yang 0000-0002-8385-2449 9 Mingchu Tang 0000-0001-6626-3389 10 Siming Chen 0000-0002-4361-0664 11 Quentin M. Ramasse 0000-0001-7466-2283 12 Qiang Li 0000-0001-6875-7403 13 Alwyn Seeds 0000-0002-5228-627x 14 Huiyun Liu 0000-0002-7654-8553 15 68577__33157__3b3ab46c262a419385e9884e6209e1a5.pdf 68577.VOR.pdf 2024-12-17T12:03:34.7996044 Output 8681468 application/pdf Version of Record true © 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license. true eng http://creativecommons.org/licenses/by/4.0/
title Indium-flush technique for C-band InAs/InP quantum dots
spellingShingle Indium-flush technique for C-band InAs/InP quantum dots
Yaonan Hou
title_short Indium-flush technique for C-band InAs/InP quantum dots
title_full Indium-flush technique for C-band InAs/InP quantum dots
title_fullStr Indium-flush technique for C-band InAs/InP quantum dots
title_full_unstemmed Indium-flush technique for C-band InAs/InP quantum dots
title_sort Indium-flush technique for C-band InAs/InP quantum dots
author_id_str_mv 113975f710084997abdb26ad5fa03e8e
author_id_fullname_str_mv 113975f710084997abdb26ad5fa03e8e_***_Yaonan Hou
author Yaonan Hou
author2 Jiajing Yuan
Calum Dear
Hui Jia
Jae-Seong Park
Yaonan Hou
Khalil El Hajraoui
Haotian Zeng
Huiwen Deng
Junjie Yang
Mingchu Tang
Siming Chen
Quentin M. Ramasse
Qiang Li
Alwyn Seeds
Huiyun Liu
format Journal article
container_title APL Materials
container_volume 12
container_issue 12
container_start_page 121109
publishDate 2024
institution Swansea University
issn 2166-532X
doi_str_mv 10.1063/5.0239360
publisher AIP Publishing
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description High-quality InAs/InP quantum dots (QDs) emitting at 1550 nm are indispensable to realize high-performance telecom C-band lasers. In general, a longer emission (&amp;gt;1550 nm) with a broad spectral character has been obtained with InAs/InP QDs. Here, we proposed the use of the indium-flush (IF) method to shorten the emission and improve the optical properties of InAs/InP QDs. By exploiting IF, the full-width at half-maximum of the room-temperature QD photoluminescence spectra is narrowed from 89.2 to 47.9 meV, with a blue shift of 300 nm (from 1824 to 1522 nm). The scanning transmission electron microscopy and electron energy loss spectroscopy results reveal the atomic-level mechanism of the IF method, which uniformly modify the height of InAs/InP QDs in a controlled manner and form distinct Al-rich and In-rich regions. Finally, InAs/InP (001) QD lasers with the IF method have been demonstrated with a low threshold current density per QD layer of 106 A/cm2. We demonstrated both in terms of mechanism model and device performance that the IF method could serve as a robust strategy for the growth of high-performance C-band InAs/InP QD lasers via molecular beam epitaxy.
published_date 2024-12-04T12:16:54Z
_version_ 1850851789492977664
score 11.08895

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