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Conference Paper/Proceeding/Abstract 955 views

Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors

A Martinez, M Aldegunde, K Kalna, J. R Barker, Karol Kalna Orcid Logo

Pages: 1 - 4

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/iwce.2012.6242845

Published: 2012
URI: https://cronfa.swan.ac.uk/Record/cronfa14751
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first_indexed 2013-07-23T12:13:31Z
last_indexed 2018-02-09T04:46:20Z
id cronfa14751
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2013-05-30T11:57:12.2034969</datestamp><bib-version>v2</bib-version><id>14751</id><entry>2013-09-03</entry><title>Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Conference Paper/Proceeding/Abstract</type><journal></journal><volume></volume><journalNumber></journalNumber><paginationStart>1</paginationStart><paginationEnd>4</paginationEnd><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2012</publishedYear><publishedDate>2012-12-31</publishedDate><doi>10.1109/iwce.2012.6242845</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-05-30T11:57:12.2034969</lastEdited><Created>2013-09-03T06:36:45.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>A</firstname><surname>Martinez</surname><order>1</order></author><author><firstname>M</firstname><surname>Aldegunde</surname><order>2</order></author><author><firstname>K</firstname><surname>Kalna</surname><order>3</order></author><author><firstname>J. R</firstname><surname>Barker</surname><order>4</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2013-05-30T11:57:12.2034969 v2 14751 2013-09-03 Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Conference Paper/Proceeding/Abstract 1 4 31 12 2012 2012-12-31 10.1109/iwce.2012.6242845 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-05-30T11:57:12.2034969 2013-09-03T06:36:45.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering A Martinez 1 M Aldegunde 2 K Kalna 3 J. R Barker 4 Karol Kalna 0000-0002-6333-9189 5
title Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
spellingShingle Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
Karol Kalna
title_short Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
title_full Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
title_fullStr Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
title_full_unstemmed Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
title_sort Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 A Martinez
M Aldegunde
K Kalna
J. R Barker
Karol Kalna
format Conference Paper/Proceeding/Abstract
container_start_page 1
publishDate 2012
institution Swansea University
doi_str_mv 10.1109/iwce.2012.6242845
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2012-12-31T03:16:54Z
_version_ 1763750355037847552
score 11.035349