Conference Paper/Proceeding/Abstract 955 views
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
Pages: 1 - 4
Swansea University Author: Karol Kalna
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/iwce.2012.6242845
Abstract
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors
Published: |
2012
|
---|---|
URI: | https://cronfa.swan.ac.uk/Record/cronfa14751 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
first_indexed |
2013-07-23T12:13:31Z |
---|---|
last_indexed |
2018-02-09T04:46:20Z |
id |
cronfa14751 |
recordtype |
SURis |
fullrecord |
<?xml version="1.0"?><rfc1807><datestamp>2013-05-30T11:57:12.2034969</datestamp><bib-version>v2</bib-version><id>14751</id><entry>2013-09-03</entry><title>Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Conference Paper/Proceeding/Abstract</type><journal></journal><volume></volume><journalNumber></journalNumber><paginationStart>1</paginationStart><paginationEnd>4</paginationEnd><publisher/><placeOfPublication/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2012</publishedYear><publishedDate>2012-12-31</publishedDate><doi>10.1109/iwce.2012.6242845</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2013-05-30T11:57:12.2034969</lastEdited><Created>2013-09-03T06:36:45.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>A</firstname><surname>Martinez</surname><order>1</order></author><author><firstname>M</firstname><surname>Aldegunde</surname><order>2</order></author><author><firstname>K</firstname><surname>Kalna</surname><order>3</order></author><author><firstname>J. R</firstname><surname>Barker</surname><order>4</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807> |
spelling |
2013-05-30T11:57:12.2034969 v2 14751 2013-09-03 Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Conference Paper/Proceeding/Abstract 1 4 31 12 2012 2012-12-31 10.1109/iwce.2012.6242845 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2013-05-30T11:57:12.2034969 2013-09-03T06:36:45.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering A Martinez 1 M Aldegunde 2 K Kalna 3 J. R Barker 4 Karol Kalna 0000-0002-6333-9189 5 |
title |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors |
spellingShingle |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors Karol Kalna |
title_short |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors |
title_full |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors |
title_fullStr |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors |
title_full_unstemmed |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors |
title_sort |
Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors |
author_id_str_mv |
1329a42020e44fdd13de2f20d5143253 |
author_id_fullname_str_mv |
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna |
author |
Karol Kalna |
author2 |
A Martinez M Aldegunde K Kalna J. R Barker Karol Kalna |
format |
Conference Paper/Proceeding/Abstract |
container_start_page |
1 |
publishDate |
2012 |
institution |
Swansea University |
doi_str_mv |
10.1109/iwce.2012.6242845 |
college_str |
Faculty of Science and Engineering |
hierarchytype |
|
hierarchy_top_id |
facultyofscienceandengineering |
hierarchy_top_title |
Faculty of Science and Engineering |
hierarchy_parent_id |
facultyofscienceandengineering |
hierarchy_parent_title |
Faculty of Science and Engineering |
department_str |
School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering |
document_store_str |
0 |
active_str |
0 |
published_date |
2012-12-31T03:16:54Z |
_version_ |
1763750355037847552 |
score |
11.035349 |