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Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design

Petar Igic Orcid Logo

IEEE Transactions on Power Electronics, Volume: 30, Issue: 4, Pages: 1914 - 1924

Swansea University Author: Petar Igic Orcid Logo

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DOI (Published version): 10.1109/TPEL.2014.2330655

Abstract

The compact model of an injection enhanced insulatedgate bipolar transistors based on the exponential solutionof the ambipolar diffusion equation is presented in this paper. Tomodel plasma carrier distribution, an exponential shape functionis used, and in steady-state forward bias operation, the pla...

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Published in: IEEE Transactions on Power Electronics
ISSN: 0885-8993 1941-0107
Published: 2015
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URI: https://cronfa.swan.ac.uk/Record/cronfa21200
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first_indexed 2015-05-08T02:10:41Z
last_indexed 2020-08-15T02:35:08Z
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spelling 2020-08-14T12:23:10.3868743 v2 21200 2015-05-07 Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design e085acc259a367abc89338346a150186 0000-0001-8150-8815 Petar Igic Petar Igic true false 2015-05-07 EEN The compact model of an injection enhanced insulatedgate bipolar transistors based on the exponential solutionof the ambipolar diffusion equation is presented in this paper. Tomodel plasma carrier distribution, an exponential shape functionis used, and in steady-state forward bias operation, the plasmacarrier concentration has a distribution of catenary form with justtwo exponential basis functions, while in transient operation, morecomplex profiles can be approximated using a number of exponentialbasis functions with a range of decay length parameters,shorter than the steady state ones. The device model developedhas been implemented in Saber circuit simulator and successfullytested against complete set of high current, high voltage experimentalresults. Journal Article IEEE Transactions on Power Electronics 30 4 1914 1924 0885-8993 1941-0107 30 4 2015 2015-04-30 10.1109/TPEL.2014.2330655 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2020-08-14T12:23:10.3868743 2015-05-07T11:07:22.3759192 Faculty of Science and Engineering School of Engineering and Applied Sciences - Uncategorised Petar Igic 0000-0001-8150-8815 1
title Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
spellingShingle Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
Petar Igic
title_short Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
title_full Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
title_fullStr Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
title_full_unstemmed Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
title_sort Exponential ADE Solution Based Compact Model of Planar Injection Enhanced IGBT Dedicated to Robust Power Converter Design
author_id_str_mv e085acc259a367abc89338346a150186
author_id_fullname_str_mv e085acc259a367abc89338346a150186_***_Petar Igic
author Petar Igic
author2 Petar Igic
format Journal article
container_title IEEE Transactions on Power Electronics
container_volume 30
container_issue 4
container_start_page 1914
publishDate 2015
institution Swansea University
issn 0885-8993
1941-0107
doi_str_mv 10.1109/TPEL.2014.2330655
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Uncategorised{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Uncategorised
document_store_str 0
active_str 0
description The compact model of an injection enhanced insulatedgate bipolar transistors based on the exponential solutionof the ambipolar diffusion equation is presented in this paper. Tomodel plasma carrier distribution, an exponential shape functionis used, and in steady-state forward bias operation, the plasmacarrier concentration has a distribution of catenary form with justtwo exponential basis functions, while in transient operation, morecomplex profiles can be approximated using a number of exponentialbasis functions with a range of decay length parameters,shorter than the steady state ones. The device model developedhas been implemented in Saber circuit simulator and successfullytested against complete set of high current, high voltage experimentalresults.
published_date 2015-04-30T03:25:06Z
_version_ 1763750871775051776
score 11.012678

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