No Cover Image

Journal article 1102 views

Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs

M Aldegunde, S P Hepplestone, P V Sushko, K Kalna, Karol Kalna Orcid Logo

Semiconductor Science and Technology, Volume: 29, Issue: 5, Start page: 054003

Swansea University Author: Karol Kalna Orcid Logo

Full text not available from this repository: check for access using links below.

Published in: Semiconductor Science and Technology
ISSN: 1361-6641
Published: 2014
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa25048
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2015-12-15T02:13:10Z
last_indexed 2018-02-09T05:05:26Z
id cronfa25048
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2016-05-18T09:41:07.5909624</datestamp><bib-version>v2</bib-version><id>25048</id><entry>2015-12-13</entry><title>Multi-scale simulations of a Mo/n+&#x2013;GaAs Schottky contact for nano-scale III&#x2013;V MOSFETs</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2015-12-13</date><deptcode>EEEG</deptcode><abstract/><type>Journal Article</type><journal>Semiconductor Science and Technology</journal><volume>29</volume><journalNumber>5</journalNumber><paginationStart>054003</paginationStart><publisher/><issnElectronic>1361-6641</issnElectronic><keywords/><publishedDay>1</publishedDay><publishedMonth>4</publishedMonth><publishedYear>2014</publishedYear><publishedDate>2014-04-01</publishedDate><doi>10.1088/0268-1242/29/5/054003</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2016-05-18T09:41:07.5909624</lastEdited><Created>2015-12-13T15:49:01.0932783</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>M</firstname><surname>Aldegunde</surname><order>1</order></author><author><firstname>S P</firstname><surname>Hepplestone</surname><order>2</order></author><author><firstname>P V</firstname><surname>Sushko</surname><order>3</order></author><author><firstname>K</firstname><surname>Kalna</surname><order>4</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>5</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2016-05-18T09:41:07.5909624 v2 25048 2015-12-13 Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2015-12-13 EEEG Journal Article Semiconductor Science and Technology 29 5 054003 1361-6641 1 4 2014 2014-04-01 10.1088/0268-1242/29/5/054003 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2016-05-18T09:41:07.5909624 2015-12-13T15:49:01.0932783 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering M Aldegunde 1 S P Hepplestone 2 P V Sushko 3 K Kalna 4 Karol Kalna 0000-0002-6333-9189 5
title Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
spellingShingle Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
Karol Kalna
title_short Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
title_full Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
title_fullStr Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
title_full_unstemmed Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
title_sort Multi-scale simulations of a Mo/n+–GaAs Schottky contact for nano-scale III–V MOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 M Aldegunde
S P Hepplestone
P V Sushko
K Kalna
Karol Kalna
format Journal article
container_title Semiconductor Science and Technology
container_volume 29
container_issue 5
container_start_page 054003
publishDate 2014
institution Swansea University
issn 1361-6641
doi_str_mv 10.1088/0268-1242/29/5/054003
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2014-04-01T03:29:47Z
_version_ 1763751165581852672
score 10.998138