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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs / K Kalna, N Seoane, A.J Garcia-Loureiro, I.G Thayne, A Asenov, Karol Kalna
IEEE Transactions on Electron Devices, Volume: 55, Issue: 9, Pages: 2297 - 2306
Swansea University Author: Karol Kalna
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Benchmarking of Scaled InGaAs Implant-Free NanoMOSFETs
|Published in:||IEEE Transactions on Electron Devices|
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A novel, n-type implant-free III-V MOSFETs with a high indium content (In0.75Ga0.25As) channel is studied using state-of-the-art finite-element heterostructure Monte Carlo and parallel 3-D drift-diffusion simulations. The device design is a result of 3-year No. 1 ranked STREP FP7 Project DUALLOGIC with 8 European Partners and two large EPSRC grants to develop III-V MOSFETs (Sub 100 nm III-V MOSFETs for Digital Applications and III-V MOSFETs for Ultimate CMOS ). III-V MOSFETs are currently intensively investigated for future digital application for the 15 or 11 nm CMOS technology with substantially funded R&D (~$100M) by Intel, IBM, SEMATECH and SELETE.
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