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The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers / P. Rees, P. Blood, M.J.H. Vanhommerig, G.J. Davies, P.J. Skevington, Paul Rees

Journal of Applied Physics, Volume: 78, Issue: 3, Start page: 1804

Swansea University Author: Paul Rees

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DOI (Published version): 10.1063/1.360212

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1995
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URI: https://cronfa.swan.ac.uk/Record/cronfa25619
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Item Description: @article rees1995,title = Temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers,journal = Journal of Applied Physics,year = 1995,volume = 78,number = 3,pages = 1804-1807,author = Rees, P. and Blood, P. and Vanhommerig, M.J.H. and Davies, G.J. and Skevington, P.J.
College: College of Engineering
Issue: 3
Start Page: 1804