Journal article 881 views
The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
Journal of Applied Physics, Volume: 78, Issue: 3, Start page: 1804
Swansea University Author:
Paul Rees
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.360212
Abstract
The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
Published in: | Journal of Applied Physics |
---|---|
ISSN: | 00218979 |
Published: |
1995
|
Online Access: |
Check full text
|
URI: | https://cronfa.swan.ac.uk/Record/cronfa25619 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Item Description: |
@article rees1995,title = Temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers,journal = Journal of Applied Physics,year = 1995,volume = 78,number = 3,pages = 1804-1807,author = Rees, P. and Blood, P. and Vanhommerig, M.J.H. and Davies, G.J. and Skevington, P.J. |
---|---|
College: |
Faculty of Science and Engineering |
Issue: |
3 |
Start Page: |
1804 |