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The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

P. Rees, P. Blood, M.J.H. Vanhommerig, G.J. Davies, P.J. Skevington, Paul Rees Orcid Logo

Journal of Applied Physics, Volume: 78, Issue: 3, Start page: 1804

Swansea University Author: Paul Rees Orcid Logo

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DOI (Published version): 10.1063/1.360212

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1995
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URI: https://cronfa.swan.ac.uk/Record/cronfa25619
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Item Description: @article rees1995,title = Temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers,journal = Journal of Applied Physics,year = 1995,volume = 78,number = 3,pages = 1804-1807,author = Rees, P. and Blood, P. and Vanhommerig, M.J.H. and Davies, G.J. and Skevington, P.J.
College: College of Engineering
Issue: 3
Start Page: 1804