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The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers

P. Rees, P. Blood, M.J.H. Vanhommerig, G.J. Davies, P.J. Skevington, Paul Rees Orcid Logo

Journal of Applied Physics, Volume: 78, Issue: 3, Start page: 1804

Swansea University Author: Paul Rees Orcid Logo

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DOI (Published version): 10.1063/1.360212

Published in: Journal of Applied Physics
ISSN: 00218979
Published: 1995
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URI: https://cronfa.swan.ac.uk/Record/cronfa25619
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spelling 2016-01-12T17:12:31.0024319 v2 25619 2016-01-12 The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers 537a2fe031a796a3bde99679ee8c24f5 0000-0002-7715-6914 Paul Rees Paul Rees true false 2016-01-12 EAAS Journal Article Journal of Applied Physics 78 3 1804 00218979 31 12 1995 1995-12-31 10.1063/1.360212 http://www.scopus.com/inward/record.url?eid=2-s2.0-0029359063&amp;partnerID=MN8TOARS @article rees1995,title = Temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers,journal = Journal of Applied Physics,year = 1995,volume = 78,number = 3,pages = 1804-1807,author = Rees, P. and Blood, P. and Vanhommerig, M.J.H. and Davies, G.J. and Skevington, P.J. COLLEGE NANME Engineering and Applied Sciences School COLLEGE CODE EAAS Swansea University 2016-01-12T17:12:31.0024319 2016-01-12T17:12:30.8152307 Faculty of Science and Engineering School of Engineering and Applied Sciences - Biomedical Engineering P. Rees 1 P. Blood 2 M.J.H. Vanhommerig 3 G.J. Davies 4 P.J. Skevington 5 Paul Rees 0000-0002-7715-6914 6
title The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
spellingShingle The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
Paul Rees
title_short The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
title_full The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
title_fullStr The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
title_full_unstemmed The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
title_sort The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
author_id_str_mv 537a2fe031a796a3bde99679ee8c24f5
author_id_fullname_str_mv 537a2fe031a796a3bde99679ee8c24f5_***_Paul Rees
author Paul Rees
author2 P. Rees
P. Blood
M.J.H. Vanhommerig
G.J. Davies
P.J. Skevington
Paul Rees
format Journal article
container_title Journal of Applied Physics
container_volume 78
container_issue 3
container_start_page 1804
publishDate 1995
institution Swansea University
issn 00218979
doi_str_mv 10.1063/1.360212
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Engineering and Applied Sciences - Biomedical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Biomedical Engineering
url http://www.scopus.com/inward/record.url?eid=2-s2.0-0029359063&amp;partnerID=MN8TOARS
document_store_str 0
active_str 0
published_date 1995-12-31T03:46:51Z
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score 11.089572

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