Journal article 813 views
The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
P. Rees,
P. Blood,
M.J.H. Vanhommerig,
G.J. Davies,
P.J. Skevington,
Paul Rees 
Journal of Applied Physics, Volume: 78, Issue: 3, Start page: 1804
Swansea University Author:
Paul Rees
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DOI (Published version): 10.1063/1.360212
Abstract
The temperature dependence of threshold current of chemical beam epitaxy grown InGaAs–InP lasers
| Published in: | Journal of Applied Physics |
|---|---|
| ISSN: | 00218979 |
| Published: |
1995
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| Online Access: |
Check full text
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa25619 |
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| Item Description: |
@article rees1995,title = Temperature dependence of threshold current of chemical beam epitaxy grown InGaAs-InP lasers,journal = Journal of Applied Physics,year = 1995,volume = 78,number = 3,pages = 1804-1807,author = Rees, P. and Blood, P. and Vanhommerig, M.J.H. and Davies, G.J. and Skevington, P.J. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
3 |
| Start Page: |
1804 |