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Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Antonio Martinez Muniz Orcid Logo, Anna Price, Raul Valin Ferreiro, Manuel Aldegunde, John Barker

Journal of Computational Electronics, Volume: 15, Issue: 4, Pages: 1130 - 1147

Swansea University Authors: Antonio Martinez Muniz Orcid Logo, Anna Price, Raul Valin Ferreiro

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DOI (Published version): 10.1007/s10825-016-0851-0

Abstract

This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mob...

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Published in: Journal of Computational Electronics
ISSN: 1569-8025 1572-8137
Published: Springer Science and Business Media LLC 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa28934
Abstract: This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule’s law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current–voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible.
Keywords: Silicon and III–V nanowire field effect transistors; Non-equilibrium Green’s functions; Electron–phonon scattering self-energies; Phonon-limited mobility; Local power dissipation
College: Faculty of Science and Engineering
Issue: 4
Start Page: 1130
End Page: 1147

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