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Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective

Antonio Martinez Muniz Orcid Logo, Anna Price, Raul Valin Ferreiro, Manuel Aldegunde, John Barker

Journal of Computational Electronics, Volume: 15, Issue: 4, Pages: 1130 - 1147

Swansea University Authors: Antonio Martinez Muniz Orcid Logo, Anna Price, Raul Valin Ferreiro

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Abstract

This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mob...

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Published in: Journal of Computational Electronics
ISSN: 1569-8025 1572-8137
Published: Springer Science and Business Media LLC 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa28934
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spelling 2020-11-30T09:39:51.9374423 v2 28934 2016-06-17 Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective cd433784251add853672979313f838ec 0000-0001-8131-7242 Antonio Martinez Muniz Antonio Martinez Muniz true false 4b40ad260b5ec6fc6919f77adc337fc3 Anna Price Anna Price true false ccbca65c92ed0ff015af486c7529fa07 Raul Valin Ferreiro Raul Valin Ferreiro true false 2016-06-17 EEEG This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule’s law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current–voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible. Journal Article Journal of Computational Electronics 15 4 1130 1147 Springer Science and Business Media LLC 1569-8025 1572-8137 Silicon and III–V nanowire field effect transistors; Non-equilibrium Green’s functions; Electron–phonon scattering self-energies; Phonon-limited mobility; Local power dissipation 1 12 2016 2016-12-01 10.1007/s10825-016-0851-0 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University EPSRC 2020-11-30T09:39:51.9374423 2016-06-17T12:41:10.0878750 College of Engineering Engineering Antonio Martinez Muniz 0000-0001-8131-7242 1 Anna Price 2 Raul Valin Ferreiro 3 Manuel Aldegunde 4 John Barker 5 0028934-02082016122804.pdf martinez2016.pdf 2016-08-02T12:28:04.9200000 Output 2579548 application/pdf Version of Record true Released under the terms of a Creative Commons Attribution 4.0 International License (CC-BY). true eng http://creativecommons.org/licenses/by/4.0
title Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
spellingShingle Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
Antonio Martinez Muniz
Anna Price
Raul Valin Ferreiro
title_short Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_full Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_fullStr Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_full_unstemmed Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
title_sort Impact of phonon scattering in Si/GaAs/InGaAs nanowires and FinFets: a NEGF perspective
author_id_str_mv cd433784251add853672979313f838ec
4b40ad260b5ec6fc6919f77adc337fc3
ccbca65c92ed0ff015af486c7529fa07
author_id_fullname_str_mv cd433784251add853672979313f838ec_***_Antonio Martinez Muniz
4b40ad260b5ec6fc6919f77adc337fc3_***_Anna Price
ccbca65c92ed0ff015af486c7529fa07_***_Raul Valin Ferreiro
author Antonio Martinez Muniz
Anna Price
Raul Valin Ferreiro
author2 Antonio Martinez Muniz
Anna Price
Raul Valin Ferreiro
Manuel Aldegunde
John Barker
format Journal article
container_title Journal of Computational Electronics
container_volume 15
container_issue 4
container_start_page 1130
publishDate 2016
institution Swansea University
issn 1569-8025
1572-8137
doi_str_mv 10.1007/s10825-016-0851-0
publisher Springer Science and Business Media LLC
college_str College of Engineering
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hierarchy_parent_title College of Engineering
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description This paper reviews our previous theoretical studies and gives further insight into phonon scattering in 3D small nanotransistors using non-equilibrium Green function methodology. The focus is on very small gate-all-around nanowires with Si, GaAs or InGaAs cores. We have calculated phonon-limited mobility and transfer characteristics for a variety of cross-sections at low and high drain bias. The nanowire cross-sectional area is shown to have a significant impact on the phonon-limited mobility and on the current reduction. In a study of narrow Si nanowires we have examined the spatially resolved power dissipation and the validity of Joule’s law. Our results show that only a fraction of the power is dissipated inside the drain region even for a relatively large simulated length extension (approximately 30 nm). When considering large source regions in the simulation domain, at low gate bias, a slight cooling of the source is observed. We have also studied the impact of the real part of phonon scattering self-energy on a narrow nanowire transistor. This real part is usually neglected in nanotransistor simulation, whereas we compute its impact on current–voltage characteristic and mobility. At low gate bias, the imaginary part strongly underestimated the current and the mobility by 50 %. At high gate bias, the two mobilities are similar and the effect on the current is negligible.
published_date 2016-12-01T03:40:33Z
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