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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors / Djordje, Peric; Wulf, Dettmer; Karol, Kalna

IEEE Transactions on Electron Devices, Volume: 63, Issue: 3, Pages: 933 - 939

Swansesa University Authors: Djordje, Peric, Wulf, Dettmer, Karol, Kalna

Abstract

Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the co...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa35988
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spelling 2017-12-05T16:15:12.9124096 v2 35988 2017-10-09 Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors 9d35cb799b2542ad39140943a9a9da65 0000-0002-1112-301X Djordje Peric Djordje Peric true false 30bb53ad906e7160e947fa01c16abf55 0000-0003-0799-4645 Wulf Dettmer Wulf Dettmer true false 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2017-10-09 EEN Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation. Journal Article IEEE Transactions on Electron Devices 63 3 933 939 0018-9383 1557-9646 3 2 2016 2016-02-03 10.1109/TED.2016.2519822 COLLEGE NANME Engineering COLLEGE CODE EEN Swansea University 2017-12-05T16:15:12.9124096 2017-10-09T12:37:47.2167023 College of Engineering Engineering Muhammad A. Elmessary 1 Daniel Nagy 2 Manuel Aldegunde 3 Jari Lindberg 4 Wulf Dettmer 0000-0003-0799-4645 5 Djordje Peric 0000-0002-1112-301X 6 Antonio J. Garcia-Loureiro 7 Karol Kalna 0000-0002-6333-9189 8 0035988-09102017124029.pdf elmessary2016v3.pdf 2017-10-09T12:40:29.3030000 Output 2939657 application/pdf Version of Record true 2017-10-09T00:00:00.0000000 true eng
title Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
spellingShingle Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
Djordje, Peric
Wulf, Dettmer
Karol, Kalna
title_short Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_full Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_fullStr Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_full_unstemmed Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_sort Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
author_id_str_mv 9d35cb799b2542ad39140943a9a9da65
30bb53ad906e7160e947fa01c16abf55
1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 9d35cb799b2542ad39140943a9a9da65_***_Djordje, Peric
30bb53ad906e7160e947fa01c16abf55_***_Wulf, Dettmer
1329a42020e44fdd13de2f20d5143253_***_Karol, Kalna
author Djordje, Peric
Wulf, Dettmer
Karol, Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 63
container_issue 3
container_start_page 933
publishDate 2016
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/TED.2016.2519822
college_str College of Engineering
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hierarchy_parent_title College of Engineering
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description Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation.
published_date 2016-02-03T03:53:26Z
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