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Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors

Muhammad A. Elmessary, Daniel Nagy, Manuel Aldegunde, Jari Lindberg, Wulf Dettmer Orcid Logo, Djordje Peric Orcid Logo, Antonio J. Garcia-Loureiro, Karol Kalna Orcid Logo

IEEE Transactions on Electron Devices, Volume: 63, Issue: 3, Pages: 933 - 939

Swansea University Authors: Wulf Dettmer Orcid Logo, Djordje Peric Orcid Logo, Karol Kalna Orcid Logo

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DOI (Published version): 10.1109/TED.2016.2519822

Abstract

Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the co...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: 2016
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URI: https://cronfa.swan.ac.uk/Record/cronfa35988
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fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-06-03T12:37:37.7763475</datestamp><bib-version>v2</bib-version><id>35988</id><entry>2017-10-09</entry><title>Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors</title><swanseaauthors><author><sid>30bb53ad906e7160e947fa01c16abf55</sid><ORCID>0000-0003-0799-4645</ORCID><firstname>Wulf</firstname><surname>Dettmer</surname><name>Wulf Dettmer</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>9d35cb799b2542ad39140943a9a9da65</sid><ORCID>0000-0002-1112-301X</ORCID><firstname>Djordje</firstname><surname>Peric</surname><name>Djordje Peric</name><active>true</active><ethesisStudent>false</ethesisStudent></author><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2017-10-09</date><deptcode>AERO</deptcode><abstract>Anisotropic 2-D Schro&#x308;dinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: &#x2329;100&#x232A; and &#x2329;110&#x232A;. We have found that quantum anisotropy effects play the strongest role in the triangular-like &#x2329;100&#x232A; channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like &#x2329;100&#x232A; channel device. The quantum anisotropy has a negligible effect in any device with the &#x2329;110&#x232A; channel orientation.</abstract><type>Journal Article</type><journal>IEEE Transactions on Electron Devices</journal><volume>63</volume><journalNumber>3</journalNumber><paginationStart>933</paginationStart><paginationEnd>939</paginationEnd><publisher/><issnPrint>0018-9383</issnPrint><issnElectronic>1557-9646</issnElectronic><keywords/><publishedDay>3</publishedDay><publishedMonth>2</publishedMonth><publishedYear>2016</publishedYear><publishedDate>2016-02-03</publishedDate><doi>10.1109/TED.2016.2519822</doi><url/><notes/><college>COLLEGE NANME</college><department>Aerospace Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>AERO</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-06-03T12:37:37.7763475</lastEdited><Created>2017-10-09T12:37:47.2167023</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering</level></path><authors><author><firstname>Muhammad A.</firstname><surname>Elmessary</surname><order>1</order></author><author><firstname>Daniel</firstname><surname>Nagy</surname><order>2</order></author><author><firstname>Manuel</firstname><surname>Aldegunde</surname><order>3</order></author><author><firstname>Jari</firstname><surname>Lindberg</surname><order>4</order></author><author><firstname>Wulf</firstname><surname>Dettmer</surname><orcid>0000-0003-0799-4645</orcid><order>5</order></author><author><firstname>Djordje</firstname><surname>Peric</surname><orcid>0000-0002-1112-301X</orcid><order>6</order></author><author><firstname>Antonio J.</firstname><surname>Garcia-Loureiro</surname><order>7</order></author><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>8</order></author></authors><documents><document><filename>0035988-09102017124029.pdf</filename><originalFilename>elmessary2016v3.pdf</originalFilename><uploaded>2017-10-09T12:40:29.3030000</uploaded><type>Output</type><contentLength>2939657</contentLength><contentType>application/pdf</contentType><version>Version of Record</version><cronfaStatus>true</cronfaStatus><embargoDate>2017-10-09T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2020-06-03T12:37:37.7763475 v2 35988 2017-10-09 Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors 30bb53ad906e7160e947fa01c16abf55 0000-0003-0799-4645 Wulf Dettmer Wulf Dettmer true false 9d35cb799b2542ad39140943a9a9da65 0000-0002-1112-301X Djordje Peric Djordje Peric true false 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2017-10-09 AERO Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation. Journal Article IEEE Transactions on Electron Devices 63 3 933 939 0018-9383 1557-9646 3 2 2016 2016-02-03 10.1109/TED.2016.2519822 COLLEGE NANME Aerospace Engineering COLLEGE CODE AERO Swansea University 2020-06-03T12:37:37.7763475 2017-10-09T12:37:47.2167023 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering Muhammad A. Elmessary 1 Daniel Nagy 2 Manuel Aldegunde 3 Jari Lindberg 4 Wulf Dettmer 0000-0003-0799-4645 5 Djordje Peric 0000-0002-1112-301X 6 Antonio J. Garcia-Loureiro 7 Karol Kalna 0000-0002-6333-9189 8 0035988-09102017124029.pdf elmessary2016v3.pdf 2017-10-09T12:40:29.3030000 Output 2939657 application/pdf Version of Record true 2017-10-09T00:00:00.0000000 true eng
title Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
spellingShingle Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
Wulf Dettmer
Djordje Peric
Karol Kalna
title_short Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_full Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_fullStr Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_full_unstemmed Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
title_sort Anisotropic Quantum Corrections for 3-D Finite-Element Monte Carlo Simulations of Nanoscale Multigate Transistors
author_id_str_mv 30bb53ad906e7160e947fa01c16abf55
9d35cb799b2542ad39140943a9a9da65
1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 30bb53ad906e7160e947fa01c16abf55_***_Wulf Dettmer
9d35cb799b2542ad39140943a9a9da65_***_Djordje Peric
1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Wulf Dettmer
Djordje Peric
Karol Kalna
author2 Muhammad A. Elmessary
Daniel Nagy
Manuel Aldegunde
Jari Lindberg
Wulf Dettmer
Djordje Peric
Antonio J. Garcia-Loureiro
Karol Kalna
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 63
container_issue 3
container_start_page 933
publishDate 2016
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/TED.2016.2519822
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Civil Engineering
document_store_str 1
active_str 0
description Anisotropic 2-D Schrödinger equation-based quantum corrections dependent on valley orientation are incorporated into a 3-D finite-element Monte Carlo simulation toolbox. The new toolbox is then applied to simulate nanoscale Si Siliconon-Insulator FinFETs with a gate length of 8.1 nm to study the contributions of conduction valleys to the drive current in various FinFET architectures and channel orientations. The 8.1 nm gate length FinFETs are studied for two cross sections: rectangular-like and triangular-like, and for two channel orientations: 〈100〉 and 〈110〉. We have found that quantum anisotropy effects play the strongest role in the triangular-like 〈100〉 channel device increasing the drain current by ~13% and slightly decreasing the current by 2% in the rectangular-like 〈100〉 channel device. The quantum anisotropy has a negligible effect in any device with the 〈110〉 channel orientation.
published_date 2016-02-03T03:44:56Z
_version_ 1763752119005872128
score 11.012678

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