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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS / A.H. Mohamed; R. Oxland; M. Aldegunde; S.P. Hepplestone; P.V. Sushko; K. Kalna

Solid-State Electronics

Swansea University Author: Kalna, Karol

  • Accepted Manuscript under embargo until: 1st February 2019

Abstract

A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm...

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Published in: Solid-State Electronics
ISSN: 0038-1101
Published: 2018
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa38406
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Abstract: A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1×1016 cm-3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rsh = 90.9 Ω/sq which is in a good agreement with an experimental value of 97 Ω/sq.
Keywords: ab-initio; Band gap narrowing; MOSFETs; III–V semiconductors; 1D Poisson-Schrödinger; Schottky barrier height; Density Functional Theory (DFT)
College: College of Engineering