Journal article 899 views 138 downloads
Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
A.H. Mohamed,
R. Oxland,
M. Aldegunde,
S.P. Hepplestone,
P.V. Sushko,
K. Kalna,
Karol Kalna 
Solid-State Electronics
Swansea University Author:
Karol Kalna
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DOI (Published version): 10.1016/j.sse.2018.01.006
Abstract
A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm...
| Published in: | Solid-State Electronics |
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| ISSN: | 0038-1101 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa38406 |
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| Abstract: |
A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1×1016 cm-3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rsh = 90.9 Ω/sq which is in a good agreement with an experimental value of 97 Ω/sq. |
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| Keywords: |
ab-initio; Band gap narrowing; MOSFETs; III–V semiconductors; 1D Poisson-Schrödinger; Schottky barrier height; Density Functional Theory (DFT) |
| College: |
Faculty of Science and Engineering |