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Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS

A.H. Mohamed, R. Oxland, M. Aldegunde, S.P. Hepplestone, P.V. Sushko, K. Kalna, Karol Kalna Orcid Logo

Solid-State Electronics

Swansea University Author: Karol Kalna Orcid Logo

Abstract

A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm...

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Published in: Solid-State Electronics
ISSN: 0038-1101
Published: 2018
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URI: https://cronfa.swan.ac.uk/Record/cronfa38406
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first_indexed 2018-02-06T20:28:25Z
last_indexed 2018-03-19T20:35:34Z
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spelling 2018-03-19T16:21:59.3739520 v2 38406 2018-02-06 Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2018-02-06 EEEG A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1×1016 cm-3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rsh = 90.9 Ω/sq which is in a good agreement with an experimental value of 97 Ω/sq. Journal Article Solid-State Electronics 0038-1101 ab-initio; Band gap narrowing; MOSFETs; III–V semiconductors; 1D Poisson-Schrödinger; Schottky barrier height; Density Functional Theory (DFT) 31 12 2018 2018-12-31 10.1016/j.sse.2018.01.006 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2018-03-19T16:21:59.3739520 2018-02-06T15:43:22.6504695 College of Engineering Engineering A.H. Mohamed 1 R. Oxland 2 M. Aldegunde 3 S.P. Hepplestone 4 P.V. Sushko 5 K. Kalna 6 Karol Kalna 0000-0002-6333-9189 7 0038406-06022018154437.pdf mohamed2018.pdf 2018-02-06T15:44:37.9670000 Output 561835 application/pdf Accepted Manuscript true 2019-02-01T00:00:00.0000000 true eng
title Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
spellingShingle Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
Karol Kalna
title_short Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
title_full Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
title_fullStr Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
title_full_unstemmed Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
title_sort Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 A.H. Mohamed
R. Oxland
M. Aldegunde
S.P. Hepplestone
P.V. Sushko
K. Kalna
Karol Kalna
format Journal article
container_title Solid-State Electronics
publishDate 2018
institution Swansea University
issn 0038-1101
doi_str_mv 10.1016/j.sse.2018.01.006
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 1
active_str 0
description A multi-scale simulation study of Ni/InAs nano-scale contact aimed for the sub-14 nm technology is carried out to understand material and transport properties at a metal-semiconductor interface. The deposited Ni metal contact on an 11 nm thick InAs channel forms an 8.5 nm thick InAs leaving a 2.5 nm thick InAs channel on a p-type doped (1×1016 cm-3) AlAs0.47Sb0.53 buffer. The density functional theory (DFT) calculations reveal a band gap narrowing in the InAs at the metal-semiconductor interface. The one-dimensional (1D) self-consistent Poisson-Schrödinger transport simulations using real-space material parameters extracted from the DFT calculations at the metal-semiconductor interface, exhibiting band gap narrowing, give a specific sheet resistance of Rsh = 90.9 Ω/sq which is in a good agreement with an experimental value of 97 Ω/sq.
published_date 2018-12-31T03:52:10Z
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score 10.898123