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Oxygen vacancies and hydrogen in amorphous In-Ga-Zn-O and ZnO
Hongfei Li,
Yuzheng Guo 
,
John Robertson
,
John Robertson
Physical Review Materials, Volume: 2, Issue: 7
Swansea University Author:
Yuzheng Guo
-
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DOI (Published version): 10.1103/PhysRevMaterials.2.074601
Abstract
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphou...
| Published in: | Physical Review Materials |
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| ISSN: | 2475-9953 |
| Published: |
2018
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa40917 |
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| Abstract: |
Hydrogen is known to be present as an impurity in amorphous oxide semiconductors at the 0.1% level. The behavior of hydrogen and oxygen vacancies in amorphous In-Ga-Zn-O is studied using density functional supercell calculations. We show that the hydrogens pair up at oxygen vacancies in the amorphous network, where they form metal-H-metal bridge bonds. These bonds are shown to create filled defect gap states lying just above the valence band edge, infrared modes at about 1400 and 1520cm−1, and they are shown to give a consistent mechanism to explain the negative bias illumination stress instability found in oxide semiconductors such as In-Ga-Zn-O (IGZO). |
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| College: |
Faculty of Science and Engineering |
| Issue: |
7 |