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Drift-Diffusion Versus Monte Carlo Simulated ON-Current Variability in Nanowire FETs

Daniel Nagy, Guillermo Indalecio, Antonio J. Garcia-Loureiro, Gabriel Espineira, Muhammad Elmessary Orcid Logo, Karol Kalna Orcid Logo, Natalia Seoane

IEEE Access, Volume: 7, Pages: 12790 - 12797

Swansea University Authors: Daniel Nagy, Muhammad Elmessary Orcid Logo, Karol Kalna Orcid Logo

Abstract

Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (QC) drift-diffusion (DD) simulations are usually em...

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Published in: IEEE Access
ISSN: 2169-3536
Published: Institute of Electrical and Electronics Engineers (IEEE) 2019
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa48909
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Abstract: Variability of semiconductor devices is seriously limiting their performance at nanoscale. The impact of variability can be accurately and effectively predicted by computer-aided simulations in order to aid future device designs. Quantum corrected (QC) drift-diffusion (DD) simulations are usually employed to estimate the variability of state-of-the-art non-planar devices but require meticulous calibration. More accurate simulation methods, such as QC Monte Carlo (MC), are considered time consuming and elaborate. Therefore, we predict TiN metal gate work-function granularity (MGG) and line edge roughness (LER) induced variability on a 10-nm gate length gate-all-around Si nanowire FET and perform a rigorous comparison of the QC DD and MC results. In case of the MGG, we have found that the QC DD predicted variability can have a difference of up to 20% in comparison with the QC MC predicted one. In case of the LER, we demonstrate that the QC DD can overestimate the QC MC simulation produced variability by a significant error of up to 56%. This error between the simulation methods will vary with the root mean square (RMS) height and maximum source/drain n -type doping. Our results indicate that the aforementioned QC DD simulation technique yields inaccurate results for the ON-current variability.
College: College of Engineering
Start Page: 12790
End Page: 12797