Journal article 424 views
DFT/NEGF study of discrete dopants in Si/III–V 3D FET
Journal of Physics: Condensed Matter, Volume: 31, Issue: 14, Start page: 144003
Swansea University Author: Antonio Martinez Muniz
Full text not available from this repository: check for access using links below.
In this work, electron densities around dopants in Si and GaAs have been calculated using density functional theory (DFT) calculations. These extracted densities have been used to describe dopants in an in-house non-equilibrium Green functions device simulator. The transfer characteristics of nanowi...
|Published in:||Journal of Physics: Condensed Matter|
Check full text
No Tags, Be the first to tag this record!
In this work, electron densities around dopants in Si and GaAs have been calculated using density functional theory (DFT) calculations. These extracted densities have been used to describe dopants in an in-house non-equilibrium Green functions device simulator. The transfer characteristics of nanowire gate all around field effect transistor have been calculated using DFT electron densities. These transport calculations were compared with those using a point charge model of the dopant. The dopants are located in the middle of the channel of the device. Specifically, DFT calculations of a 512 atom Si supercell with a single impurity atom have been carried out, both phosphorous and boron atoms have been used as donor and acceptor impurities respectively. The calculations were repeated on a gallium arsenide supercell, where the silicon atom substituted gallium and arsenide to act as donor and acceptor respectively. We found that for donors and acceptors, the DFT charge distribution extends similarly in both materials. In addition, the relaxed structure produces a 50% larger spread of electronic charge as compared with unrelaxed Si and GaAs. The extracted current voltage characteristics of the devices are altered significantly using the charge density obtained by DFT. At 0.7 V the current in Si is 20% larger using the DFT charge density compared to the point charge model for donors. Whereas the current using the point charge model in GaAs is 2.5 times larger than the distributed charge. Devices exhibit substantial tunnelling currents for donors and acceptors irrespective of the model of the dopant considered. In GaAs, this was 76% using a point charge and 78% using the distributed charge when using a donor; 61% and 68% in Si respectively. The tunnelling current using acceptors for Si was 100% and 99% using GaAs for both models.
College of Engineering