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On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes

Anastasios Arvanitopoulos, Marina Antoniou, Samuel Perkins, Mike Jennings Orcid Logo, Manuel Belanche, Konstantinos N. Gyftakis, Neophytos Lophitis

IEEE Transactions on Industry Applications, Pages: 1 - 1

Swansea University Author: Mike Jennings Orcid Logo

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DOI (Published version): 10.1109/TIA.2019.2911872

Abstract

Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to th...

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Published in: IEEE Transactions on Industry Applications
ISSN: 0093-9994 1939-9367
Published: 2019
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URI: https://cronfa.swan.ac.uk/Record/cronfa49906
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first_indexed 2019-04-08T10:16:43Z
last_indexed 2020-06-29T19:02:38Z
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spelling 2020-06-29T13:08:56.4164067 v2 49906 2019-04-05 On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2019-04-05 EEEG Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C- and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available. Journal Article IEEE Transactions on Industry Applications 1 1 0093-9994 1939-9367 31 12 2019 2019-12-31 10.1109/TIA.2019.2911872 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-06-29T13:08:56.4164067 2019-04-05T09:53:08.1813100 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Anastasios Arvanitopoulos 1 Marina Antoniou 2 Samuel Perkins 3 Mike Jennings 0000-0003-3270-0805 4 Manuel Belanche 5 Konstantinos N. Gyftakis 6 Neophytos Lophitis 7 0049906-12042019102032.pdf arvanitopoulos2019.pdf 2019-04-12T10:20:32.6700000 Output 1279151 application/pdf Accepted Manuscript true 2019-04-12T00:00:00.0000000 true eng
title On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
spellingShingle On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
Mike Jennings
title_short On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
title_full On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
title_fullStr On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
title_full_unstemmed On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
title_sort On the suitability of 3C- Silicon Carbide as an alternative to 4H- Silicon Carbide for power diodes
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Anastasios Arvanitopoulos
Marina Antoniou
Samuel Perkins
Mike Jennings
Manuel Belanche
Konstantinos N. Gyftakis
Neophytos Lophitis
format Journal article
container_title IEEE Transactions on Industry Applications
container_start_page 1
publishDate 2019
institution Swansea University
issn 0093-9994
1939-9367
doi_str_mv 10.1109/TIA.2019.2911872
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next years, 3C-SiC devices can become a commercial reality. Inevitably, a comparison to the most well developed polytype of SiC, the 4H-SiC, should exist. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device design, analysis and comparison. It is also needed to perform an exhaustive investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is best suited. In this work, we validate the recently developed Technology Computer Aided Design (TCAD) material models for 3C-SiC and those of 4H-SiC with measurements on power diodes. An excellent agreement between measurements and TCAD simulations was obtained. Thereafter, based on this validation, 3C- and 4H-SiC vertical power diodes are assessed, to create trade-off maps. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes and allows to predict which applications would benefit once electrically graded 3C-SiC becomes available.
published_date 2019-12-31T04:01:10Z
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score 11.016235

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