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A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability

Fan Li, Phil Mawby, Qiu Song, Amador Perez-Tomas, Vishal Shah, Yogesh Sharma, Dean Hamilton, Craig Fisher, Peter Gammon, Mike Jennings Orcid Logo

IEEE Transactions on Electron Devices, Volume: 67, Issue: 1, Pages: 237 - 242

Swansea University Author: Mike Jennings Orcid Logo

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Abstract

Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO 2 layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium- and long-term time-dependent dielectric breakdowns (TD...

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Published in: IEEE Transactions on Electron Devices
ISSN: 0018-9383 1557-9646
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53335
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spelling 2020-11-24T17:13:12.2038471 v2 53335 2020-01-23 A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2020-01-23 EEEG Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO 2 layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium- and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO 2 layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. Fowler–Nordheim (F-N) tunneling is observed above 7 MV/cm and an effective barrier height of 3.7 eV is obtained, which is the highest known for native SiO 2 layers grown on the semiconductor substrate. The observed dependence of the oxide reliability on the gate active area suggests that the oxide quality has not reached the intrinsic level. Three failure mechanisms were identified and confirmed by both medium- and long-term results. Although two of them are likely due to extrinsic defects from material quality and fabrication steps, the one dominating the high field (>8.5 MV/cm) should be attributed to the electron impact ionization within SiO 2 . At room temperature, the field acceleration factor is found to be $\approx 0.906$ dec/(MV/cm) for high fields, and the projected lifetime exceeds 10 years at 4.5 MV/cm. Journal Article IEEE Transactions on Electron Devices 67 1 237 242 Institute of Electrical and Electronics Engineers (IEEE) 0018-9383 1557-9646 3C-SiC , failure mechanism , MOS capacitor , reliability , time-dependent dielectric breakdown (TDDB) 1 1 2020 2020-01-01 10.1109/ted.2019.2954911 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-11-24T17:13:12.2038471 2020-01-23T09:49:53.1623697 Fan Li 1 Phil Mawby 2 Qiu Song 3 Amador Perez-Tomas 4 Vishal Shah 5 Yogesh Sharma 6 Dean Hamilton 7 Craig Fisher 8 Peter Gammon 9 Mike Jennings 0000-0003-3270-0805 10
title A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
spellingShingle A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
Mike Jennings
title_short A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
title_full A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
title_fullStr A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
title_full_unstemmed A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
title_sort A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Fan Li
Phil Mawby
Qiu Song
Amador Perez-Tomas
Vishal Shah
Yogesh Sharma
Dean Hamilton
Craig Fisher
Peter Gammon
Mike Jennings
format Journal article
container_title IEEE Transactions on Electron Devices
container_volume 67
container_issue 1
container_start_page 237
publishDate 2020
institution Swansea University
issn 0018-9383
1557-9646
doi_str_mv 10.1109/ted.2019.2954911
publisher Institute of Electrical and Electronics Engineers (IEEE)
document_store_str 0
active_str 0
description Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO 2 layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium- and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO 2 layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. Fowler–Nordheim (F-N) tunneling is observed above 7 MV/cm and an effective barrier height of 3.7 eV is obtained, which is the highest known for native SiO 2 layers grown on the semiconductor substrate. The observed dependence of the oxide reliability on the gate active area suggests that the oxide quality has not reached the intrinsic level. Three failure mechanisms were identified and confirmed by both medium- and long-term results. Although two of them are likely due to extrinsic defects from material quality and fabrication steps, the one dominating the high field (>8.5 MV/cm) should be attributed to the electron impact ionization within SiO 2 . At room temperature, the field acceleration factor is found to be $\approx 0.906$ dec/(MV/cm) for high fields, and the projected lifetime exceeds 10 years at 4.5 MV/cm.
published_date 2020-01-01T04:07:33Z
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score 10.919533