No Cover Image

Journal article 175 views

A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes

Anastasios E. Arvanitopoulos, Marina Antoniou, Mike Jennings Orcid Logo, Samuel Perkins, Konstantinos N. Gyftakis, Philip Mawby, Neophytos Lophitis

IEEE Journal of Emerging and Selected Topics in Power Electronics, Volume: 8, Issue: 1, Pages: 54 - 65

Swansea University Author: Mike Jennings Orcid Logo

Full text not available from this repository: check for access using links below.

Abstract

3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this techno...

Full description

Published in: IEEE Journal of Emerging and Selected Topics in Power Electronics
ISSN: 2168-6777 2168-6785
Published: Institute of Electrical and Electronics Engineers (IEEE) 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa53620
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2020-02-24T13:40:17Z
last_indexed 2020-10-17T03:07:20Z
id cronfa53620
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2020-10-16T14:00:14.5251705</datestamp><bib-version>v2</bib-version><id>53620</id><entry>2020-02-24</entry><title>A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes</title><swanseaauthors><author><sid>e0ba5d7ece08cd70c9f8f8683996454a</sid><ORCID>0000-0003-3270-0805</ORCID><firstname>Mike</firstname><surname>Jennings</surname><name>Mike Jennings</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2020-02-24</date><deptcode>EEEG</deptcode><abstract>3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current&#x2013;voltage ( $I$ &#x2013; $V$ ) characteristics in these devices carry considerable information about the material quality. In this context, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the heterointerface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Furthermore, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved, and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.</abstract><type>Journal Article</type><journal>IEEE Journal of Emerging and Selected Topics in Power Electronics</journal><volume>8</volume><journalNumber>1</journalNumber><paginationStart>54</paginationStart><paginationEnd>65</paginationEnd><publisher>Institute of Electrical and Electronics Engineers (IEEE)</publisher><issnPrint>2168-6777</issnPrint><issnElectronic>2168-6785</issnElectronic><keywords>Schottky barriers; Silicon carbide; Silicon; Electron traps; Schottky diodes; Power electronics</keywords><publishedDay>1</publishedDay><publishedMonth>3</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-03-01</publishedDate><doi>10.1109/jestpe.2019.2942714</doi><url/><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2020-10-16T14:00:14.5251705</lastEdited><Created>2020-02-24T09:53:42.2731241</Created><path><level id="1">College of Engineering</level><level id="2">Engineering</level></path><authors><author><firstname>Anastasios E.</firstname><surname>Arvanitopoulos</surname><order>1</order></author><author><firstname>Marina</firstname><surname>Antoniou</surname><order>2</order></author><author><firstname>Mike</firstname><surname>Jennings</surname><orcid>0000-0003-3270-0805</orcid><order>3</order></author><author><firstname>Samuel</firstname><surname>Perkins</surname><order>4</order></author><author><firstname>Konstantinos N.</firstname><surname>Gyftakis</surname><order>5</order></author><author><firstname>Philip</firstname><surname>Mawby</surname><order>6</order></author><author><firstname>Neophytos</firstname><surname>Lophitis</surname><order>7</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2020-10-16T14:00:14.5251705 v2 53620 2020-02-24 A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2020-02-24 EEEG 3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current–voltage ( $I$ – $V$ ) characteristics in these devices carry considerable information about the material quality. In this context, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the heterointerface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Furthermore, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved, and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions. Journal Article IEEE Journal of Emerging and Selected Topics in Power Electronics 8 1 54 65 Institute of Electrical and Electronics Engineers (IEEE) 2168-6777 2168-6785 Schottky barriers; Silicon carbide; Silicon; Electron traps; Schottky diodes; Power electronics 1 3 2020 2020-03-01 10.1109/jestpe.2019.2942714 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2020-10-16T14:00:14.5251705 2020-02-24T09:53:42.2731241 College of Engineering Engineering Anastasios E. Arvanitopoulos 1 Marina Antoniou 2 Mike Jennings 0000-0003-3270-0805 3 Samuel Perkins 4 Konstantinos N. Gyftakis 5 Philip Mawby 6 Neophytos Lophitis 7
title A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
spellingShingle A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
Mike, Jennings
title_short A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
title_full A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
title_fullStr A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
title_full_unstemmed A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
title_sort A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike, Jennings_***_0000-0003-3270-0805
author Mike, Jennings
author2 Anastasios E. Arvanitopoulos
Marina Antoniou
Mike Jennings
Samuel Perkins
Konstantinos N. Gyftakis
Philip Mawby
Neophytos Lophitis
format Journal article
container_title IEEE Journal of Emerging and Selected Topics in Power Electronics
container_volume 8
container_issue 1
container_start_page 54
publishDate 2020
institution Swansea University
issn 2168-6777
2168-6785
doi_str_mv 10.1109/jestpe.2019.2942714
publisher Institute of Electrical and Electronics Engineers (IEEE)
college_str College of Engineering
hierarchytype
hierarchy_top_id collegeofengineering
hierarchy_top_title College of Engineering
hierarchy_parent_id collegeofengineering
hierarchy_parent_title College of Engineering
department_str Engineering{{{_:::_}}}College of Engineering{{{_:::_}}}Engineering
document_store_str 0
active_str 0
description 3C-silicon carbide (3C-SiC) Schottky barrier diodes (SBDs) on silicon (Si) substrates (3C-SiC-on-Si) have been found to suffer from excessive subthreshold current, despite the superior electrical properties of 3C-SiC. In turn, that is one of the factors deterring the commercialization of this technology. The forward current–voltage ( $I$ – $V$ ) characteristics in these devices carry considerable information about the material quality. In this context, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance. The model includes defects originating from both the Schottky contact and the heterointerface of 3C-SiC with Si, which allows the investigation of their impact on the magnification of the subthreshold current. Furthermore, the simulation results and measured data allowed for the identification of additional distributions of interfacial states, the effect of which is linked to the observed nonuniformities of the Barrier height value. A comprehensive characterization of the defects affecting the carrier transport mechanisms of the investigated 3C-SiC-on-Si power diode is thus achieved, and the proposed TCAD model is able to accurately predict the device current both during forward and reverse bias conditions.
published_date 2020-03-01T04:20:27Z
_version_ 1723080090444627968
score 10.853036