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p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics

Ekaterine Chikoidze, Corinne Sartel, Ismail Madaci, Hagar Mohamed, Christele Vilar, Belén Ballesteros, Francisco Belarre, Elena del Corro, Pablo Vales-Castro, Guillaume Sauthier, Lijie Li Orcid Logo, Mike Jennings Orcid Logo, Vincent Sallet, Yves Dumont, Amador Pérez-Tomás

Crystal Growth & Design, Volume: 20, Issue: 4, Pages: 2535 - 2546

Swansea University Authors: Lijie Li Orcid Logo, Mike Jennings Orcid Logo

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DOI (Published version): 10.1021/acs.cgd.9b01669

Abstract

The family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demo...

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Published in: Crystal Growth & Design
ISSN: 1528-7483 1528-7505
Published: American Chemical Society (ACS) 2020
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URI: https://cronfa.swan.ac.uk/Record/cronfa53748
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In this work, it is demonstrated that the ternary ultrawide-band-gap (&#x223C;5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic &#x3B2;-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 &#xD7; 1015 cm&#x2013;3, while hole mobilities were found to be &#x3BC;h = 7&#x2013;10 cm2/(V s) (in the 680&#x2013;850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics.</abstract><type>Journal Article</type><journal>Crystal Growth &amp; Design</journal><volume>20</volume><journalNumber>4</journalNumber><paginationStart>2535</paginationStart><paginationEnd>2546</paginationEnd><publisher>American Chemical Society (ACS)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>1528-7483</issnPrint><issnElectronic>1528-7505</issnElectronic><keywords>Spinel, Oxides, Fluxes, Semiconductors, Electrical conductivity</keywords><publishedDay>1</publishedDay><publishedMonth>4</publishedMonth><publishedYear>2020</publishedYear><publishedDate>2020-04-01</publishedDate><doi>10.1021/acs.cgd.9b01669</doi><url>http://dx.doi.org/10.1021/acs.cgd.9b01669</url><notes/><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2021-09-09T17:23:24.3660819</lastEdited><Created>2020-03-06T22:41:05.8338668</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Ekaterine</firstname><surname>Chikoidze</surname><order>1</order></author><author><firstname>Corinne</firstname><surname>Sartel</surname><order>2</order></author><author><firstname>Ismail</firstname><surname>Madaci</surname><order>3</order></author><author><firstname>Hagar</firstname><surname>Mohamed</surname><order>4</order></author><author><firstname>Christele</firstname><surname>Vilar</surname><order>5</order></author><author><firstname>Bel&#xE9;n</firstname><surname>Ballesteros</surname><order>6</order></author><author><firstname>Francisco</firstname><surname>Belarre</surname><order>7</order></author><author><firstname>Elena del</firstname><surname>Corro</surname><order>8</order></author><author><firstname>Pablo</firstname><surname>Vales-Castro</surname><order>9</order></author><author><firstname>Guillaume</firstname><surname>Sauthier</surname><order>10</order></author><author><firstname>Lijie</firstname><surname>Li</surname><orcid>0000-0003-4630-7692</orcid><order>11</order></author><author><firstname>Mike</firstname><surname>Jennings</surname><orcid>0000-0003-3270-0805</orcid><order>12</order></author><author><firstname>Vincent</firstname><surname>Sallet</surname><order>13</order></author><author><firstname>Yves</firstname><surname>Dumont</surname><order>14</order></author><author><firstname>Amador</firstname><surname>P&#xE9;rez-Tom&#xE1;s</surname><order>15</order></author></authors><documents><document><filename>53748__16917__5e96f76ba5744f6c9b2f297cfdac0bdf.pdf</filename><originalFilename>Accepted manuscript - 18-2020- APT_LL.pdf</originalFilename><uploaded>2020-03-25T12:45:14.9016329</uploaded><type>Output</type><contentLength>1793378</contentLength><contentType>application/pdf</contentType><version>Accepted Manuscript</version><cronfaStatus>true</cronfaStatus><embargoDate>2021-03-06T00:00:00.0000000</embargoDate><copyrightCorrect>true</copyrightCorrect><language>eng</language></document></documents><OutputDurs/></rfc1807>
spelling 2021-09-09T17:23:24.3660819 v2 53748 2020-03-06 p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics ed2c658b77679a28e4c1dcf95af06bd6 0000-0003-4630-7692 Lijie Li Lijie Li true false e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2020-03-06 EEEG The family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic β-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 1015 cm–3, while hole mobilities were found to be μh = 7–10 cm2/(V s) (in the 680–850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics. Journal Article Crystal Growth & Design 20 4 2535 2546 American Chemical Society (ACS) 1528-7483 1528-7505 Spinel, Oxides, Fluxes, Semiconductors, Electrical conductivity 1 4 2020 2020-04-01 10.1021/acs.cgd.9b01669 http://dx.doi.org/10.1021/acs.cgd.9b01669 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2021-09-09T17:23:24.3660819 2020-03-06T22:41:05.8338668 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Ekaterine Chikoidze 1 Corinne Sartel 2 Ismail Madaci 3 Hagar Mohamed 4 Christele Vilar 5 Belén Ballesteros 6 Francisco Belarre 7 Elena del Corro 8 Pablo Vales-Castro 9 Guillaume Sauthier 10 Lijie Li 0000-0003-4630-7692 11 Mike Jennings 0000-0003-3270-0805 12 Vincent Sallet 13 Yves Dumont 14 Amador Pérez-Tomás 15 53748__16917__5e96f76ba5744f6c9b2f297cfdac0bdf.pdf Accepted manuscript - 18-2020- APT_LL.pdf 2020-03-25T12:45:14.9016329 Output 1793378 application/pdf Accepted Manuscript true 2021-03-06T00:00:00.0000000 true eng
title p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
spellingShingle p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
Lijie Li
Mike Jennings
title_short p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
title_full p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
title_fullStr p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
title_full_unstemmed p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
title_sort p-Type Ultrawide-Band-Gap Spinel ZnGa2O4: New Perspectives for Energy Electronics
author_id_str_mv ed2c658b77679a28e4c1dcf95af06bd6
e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv ed2c658b77679a28e4c1dcf95af06bd6_***_Lijie Li
e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Lijie Li
Mike Jennings
author2 Ekaterine Chikoidze
Corinne Sartel
Ismail Madaci
Hagar Mohamed
Christele Vilar
Belén Ballesteros
Francisco Belarre
Elena del Corro
Pablo Vales-Castro
Guillaume Sauthier
Lijie Li
Mike Jennings
Vincent Sallet
Yves Dumont
Amador Pérez-Tomás
format Journal article
container_title Crystal Growth & Design
container_volume 20
container_issue 4
container_start_page 2535
publishDate 2020
institution Swansea University
issn 1528-7483
1528-7505
doi_str_mv 10.1021/acs.cgd.9b01669
publisher American Chemical Society (ACS)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://dx.doi.org/10.1021/acs.cgd.9b01669
document_store_str 1
active_str 0
description The family of spinel compounds is a large and important class of multifunctional materials of general formulation AB2X4 with many advanced applications in energy and optoelectronic areas such as fuel cells, batteries, catalysis, photonics, spintronics, and thermoelectricity. In this work, it is demonstrated that the ternary ultrawide-band-gap (∼5 eV) spinel zinc gallate (ZnGa2O4) arguably is the native p-type ternary oxide semiconductor with the largest Eg value (in comparison with the recently discovered binary p-type monoclinic β-Ga2O3 oxide). For nominally undoped ZnGa2O4 the high-temperature Hall effect hole concentration was determined to be as large as p = 2 × 1015 cm–3, while hole mobilities were found to be μh = 7–10 cm2/(V s) (in the 680–850 K temperature range). An acceptor-like small Fermi level was further corroborated by X-ray spectroscopy and by density functional theory calculations. Our findings, as an important step toward p-type doping, opens up further perspectives for ultrawide-band-gap bipolar spinel electronics and further promotes ultrawide-band-gap ternary oxides such as ZnGa2O4 to the forefront of the quest of the next generation of semiconductor materials for more efficient energy optoelectronics and power electronics.
published_date 2020-04-01T04:06:52Z
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score 11.017797

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