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Analysis of Potential and Electron Density Behaviour in Extremely Scaled Si and InGaAs MOSFETs Applying Monte Carlo Simulations

Aynul Islam, Anika Tasnim Aynul, Karol Kalna Orcid Logo

Journal of Physics: Conference Series, Volume: 1637, Start page: 012007

Swansea University Author: Karol Kalna Orcid Logo

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DOI (Published version): 10.1088/1742-6596/1637/1/012007

Abstract

Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simulated this nano-device by Monte Carlo (MC) with quantum corrections. The transistors are scaled-down only in lateral dimensions in order to study electron transport approaching a ballistic limit along...

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Published in: Journal of Physics: Conference Series
ISSN: 1742-6588 1742-6596
Published: IOP Publishing 2020
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa55818
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Abstract: Scaling of Silicon and InGaAs MOSFETs of a 25 nm gate length till shortest gate length of 5 nm, simulated this nano-device by Monte Carlo (MC) with quantum corrections. The transistors are scaled-down only in lateral dimensions in order to study electron transport approaching a ballistic limit along the scaled channel following experimental works. These MC simulations are able to give detailed insight into physical behaviour of electron velocity, electron density, and potential in relation to the drive current. We found that electron peak velocity increases during the scaling in Si MOSFETs till the 10 nm gate length and then dramatically declines due to a strong long-range Coulomb interaction among the source and the drain [16]. This effect is not observed in the equivalent InGaAs MOSFETs in which electron peak velocity exhibits double peak which steadily increases during the scaling [16]. However, the increasing of current in the equivalent InGaAs MOSFETs is moderate, by about 24 %, by comparing of current in the Si MOSFETs of 74 % delivered by 5 nm channel transistor.
College: Faculty of Science and Engineering
Start Page: 012007

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