Conference Paper/Proceeding/Abstract 460 views
Optimisation of 100V high side LDMOS using multiple simulation techniques / Paul, Holland
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on, Pages: 104 - 107
Swansea University Author: Paul, Holland
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DOI (Published version): 10.1109/ISPSD.2009.5158012
Abstract
Optimisation of 100V high side LDMOS using multiple simulation techniques
| Published in: | Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on |
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| ISSN: | 1943-653X |
| Published: |
2009
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5750 |
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| Item Description: |
This paper presents state-of-the-art 2-D and 3-D finite element techniques in CMOS design to implement a now commercially available CMOS High Voltage Platform designed by Dr Holland at Swansea University in Collaboration with the largest two semiconductor companies in the UK. |
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| College: |
College of Engineering |
| Start Page: |
104 |
| End Page: |
107 |