Conference Paper/Proceeding/Abstract 495 views
Optimisation of 100V high side LDMOS using multiple simulation techniques / M Elwin; P Holland; I Anteney; J Ellis; L Armstrong; G Birchby; P Igic; Paul Holland
Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on, Pages: 104 - 107
Swansea University Author: Paul, Holland
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1109/ISPSD.2009.5158012
Abstract
Optimisation of 100V high side LDMOS using multiple simulation techniques
| Published in: | Power Semiconductor Devices & IC's, 2009. ISPSD 2009. 21st International Symposium on |
|---|---|
| ISSN: | 1943-653X |
| Published: |
2009
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa5750 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Item Description: |
This paper presents state-of-the-art 2-D and 3-D finite element techniques in CMOS design to implement a now commercially available CMOS High Voltage Platform designed by Dr Holland at Swansea University in Collaboration with the largest two semiconductor companies in the UK. |
|---|---|
| College: |
College of Engineering |
| Start Page: |
104 |
| End Page: |
107 |