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3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations

Anastasios Arvanitopoulos Orcid Logo, Marina Antoniou Orcid Logo, Fan Li Orcid Logo, Mike Jennings Orcid Logo, Samuel Perkins Orcid Logo, Konstantinos Gyftakis Orcid Logo, Neophytos Lophitis Orcid Logo

IEEE Transactions on Industry Applications, Volume: 58, Issue: 1, Pages: 565 - 575

Swansea University Author: Mike Jennings Orcid Logo

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DOI (Published version): 10.1109/tia.2021.3119269

Published in: IEEE Transactions on Industry Applications
ISSN: 0093-9994 1939-9367
Published: Institute of Electrical and Electronics Engineers (IEEE) 2022
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URI: https://cronfa.swan.ac.uk/Record/cronfa58665
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first_indexed 2021-11-15T11:11:16Z
last_indexed 2022-04-05T03:18:13Z
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spelling 2022-04-04T16:03:51.6059006 v2 58665 2021-11-15 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false 2021-11-15 EEEG Journal Article IEEE Transactions on Industry Applications 58 1 565 575 Institute of Electrical and Electronics Engineers (IEEE) 0093-9994 1939-9367 1 1 2022 2022-01-01 10.1109/tia.2021.3119269 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University CHALLENGE (Grant Number: HORIZON 2020-NMBP-720827) European Union's Horizon 2020 Program 10.13039/501100000288-Royal Society (Grant Number: DH160139) 2022-04-04T16:03:51.6059006 2021-11-15T11:11:08.5460295 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Anastasios Arvanitopoulos 0000-0001-5694-2003 1 Marina Antoniou 0000-0002-7544-3784 2 Fan Li 0000-0002-9486-8876 3 Mike Jennings 0000-0003-3270-0805 4 Samuel Perkins 0000-0001-6704-3337 5 Konstantinos Gyftakis 0000-0002-9730-4267 6 Neophytos Lophitis 0000-0002-0901-0876 7
title 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
spellingShingle 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
Mike Jennings
title_short 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
title_full 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
title_fullStr 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
title_full_unstemmed 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
title_sort 3C-SiC-on-Si MOSFETs: Overcoming Material Technology Limitations
author_id_str_mv e0ba5d7ece08cd70c9f8f8683996454a
author_id_fullname_str_mv e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings
author Mike Jennings
author2 Anastasios Arvanitopoulos
Marina Antoniou
Fan Li
Mike Jennings
Samuel Perkins
Konstantinos Gyftakis
Neophytos Lophitis
format Journal article
container_title IEEE Transactions on Industry Applications
container_volume 58
container_issue 1
container_start_page 565
publishDate 2022
institution Swansea University
issn 0093-9994
1939-9367
doi_str_mv 10.1109/tia.2021.3119269
publisher Institute of Electrical and Electronics Engineers (IEEE)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2022-01-01T04:15:22Z
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score 11.017797

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