Journal article 398 views
Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
Haichang Lu,
Yuzheng Guo 
,
John Robertson
,
John Robertson
ACS Applied Materials & Interfaces, Volume: 13, Issue: 39, Pages: 47226 - 47235
Swansea University Author:
Yuzheng Guo
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1021/acsami.1c13583
Abstract
Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
| Published in: | ACS Applied Materials & Interfaces |
|---|---|
| ISSN: | 1944-8244 1944-8252 |
| Published: |
American Chemical Society (ACS)
2021
|
| Online Access: |
Check full text
|
| URI: | https://cronfa.swan.ac.uk/Record/cronfa58669 |
| Tags: |
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| Item Description: |
Author accepted manuscript available at https://www.repository.cam.ac.uk/handle/1810/329294 |
|---|---|
| Keywords: |
hexagonal boron nitride; magnetic tunnel junctions; ab initio calculation; Schottky barrier height; Fermi level pinning; tunnel magnetoresistance |
| College: |
Faculty of Science and Engineering |
| Issue: |
39 |
| Start Page: |
47226 |
| End Page: |
47235 |