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Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions

Haichang Lu, Yuzheng Guo Orcid Logo, John Robertson

ACS Applied Materials & Interfaces, Volume: 13, Issue: 39, Pages: 47226 - 47235

Swansea University Author: Yuzheng Guo Orcid Logo

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DOI (Published version): 10.1021/acsami.1c13583

Published in: ACS Applied Materials & Interfaces
ISSN: 1944-8244 1944-8252
Published: American Chemical Society (ACS) 2021
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Item Description: Author accepted manuscript available at
Keywords: hexagonal boron nitride; magnetic tunnel junctions; ab initio calculation; Schottky barrier height; Fermi level pinning; tunnel magnetoresistance
College: Faculty of Science and Engineering
Issue: 39
Start Page: 47226
End Page: 47235