No Cover Image

Journal article 457 views

Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions

Haichang Lu, Yuzheng Guo Orcid Logo, John Robertson

ACS Applied Materials & Interfaces, Volume: 13, Issue: 39, Pages: 47226 - 47235

Swansea University Author: Yuzheng Guo Orcid Logo

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1021/acsami.1c13583

Published in: ACS Applied Materials & Interfaces
ISSN: 1944-8244 1944-8252
Published: American Chemical Society (ACS) 2021
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa58669
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2021-11-15T11:30:01Z
last_indexed 2021-12-18T04:24:31Z
id cronfa58669
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2021-12-17T17:02:35.1780682</datestamp><bib-version>v2</bib-version><id>58669</id><entry>2021-11-15</entry><title>Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions</title><swanseaauthors><author><sid>2c285ab01f88f7ecb25a3aacabee52ea</sid><ORCID>0000-0003-2656-0340</ORCID><firstname>Yuzheng</firstname><surname>Guo</surname><name>Yuzheng Guo</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2021-11-15</date><deptcode>GENG</deptcode><abstract/><type>Journal Article</type><journal>ACS Applied Materials &amp; Interfaces</journal><volume>13</volume><journalNumber>39</journalNumber><paginationStart>47226</paginationStart><paginationEnd>47235</paginationEnd><publisher>American Chemical Society (ACS)</publisher><placeOfPublication/><isbnPrint/><isbnElectronic/><issnPrint>1944-8244</issnPrint><issnElectronic>1944-8252</issnElectronic><keywords>hexagonal boron nitride; magnetic tunnel junctions; ab initio calculation; Schottky barrier height; Fermi level pinning; tunnel magnetoresistance</keywords><publishedDay>6</publishedDay><publishedMonth>10</publishedMonth><publishedYear>2021</publishedYear><publishedDate>2021-10-06</publishedDate><doi>10.1021/acsami.1c13583</doi><url/><notes>Author accepted manuscript available at https://www.repository.cam.ac.uk/handle/1810/329294</notes><college>COLLEGE NANME</college><department>General Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>GENG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2021-12-17T17:02:35.1780682</lastEdited><Created>2021-11-15T11:29:50.3510099</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering</level></path><authors><author><firstname>Haichang</firstname><surname>Lu</surname><order>1</order></author><author><firstname>Yuzheng</firstname><surname>Guo</surname><orcid>0000-0003-2656-0340</orcid><order>2</order></author><author><firstname>John</firstname><surname>Robertson</surname><order>3</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2021-12-17T17:02:35.1780682 v2 58669 2021-11-15 Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions 2c285ab01f88f7ecb25a3aacabee52ea 0000-0003-2656-0340 Yuzheng Guo Yuzheng Guo true false 2021-11-15 GENG Journal Article ACS Applied Materials & Interfaces 13 39 47226 47235 American Chemical Society (ACS) 1944-8244 1944-8252 hexagonal boron nitride; magnetic tunnel junctions; ab initio calculation; Schottky barrier height; Fermi level pinning; tunnel magnetoresistance 6 10 2021 2021-10-06 10.1021/acsami.1c13583 Author accepted manuscript available at https://www.repository.cam.ac.uk/handle/1810/329294 COLLEGE NANME General Engineering COLLEGE CODE GENG Swansea University 2021-12-17T17:02:35.1780682 2021-11-15T11:29:50.3510099 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering Haichang Lu 1 Yuzheng Guo 0000-0003-2656-0340 2 John Robertson 3
title Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
spellingShingle Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
Yuzheng Guo
title_short Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
title_full Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
title_fullStr Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
title_full_unstemmed Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
title_sort Ab Initio Study of Hexagonal Boron Nitride as the Tunnel Barrier in Magnetic Tunnel Junctions
author_id_str_mv 2c285ab01f88f7ecb25a3aacabee52ea
author_id_fullname_str_mv 2c285ab01f88f7ecb25a3aacabee52ea_***_Yuzheng Guo
author Yuzheng Guo
author2 Haichang Lu
Yuzheng Guo
John Robertson
format Journal article
container_title ACS Applied Materials & Interfaces
container_volume 13
container_issue 39
container_start_page 47226
publishDate 2021
institution Swansea University
issn 1944-8244
1944-8252
doi_str_mv 10.1021/acsami.1c13583
publisher American Chemical Society (ACS)
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - General Engineering
document_store_str 0
active_str 0
published_date 2021-10-06T04:15:22Z
_version_ 1763754034046435328
score 11.012678

Similar Items