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Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application
Materials Science Forum, Volume: 1062, Pages: 582 - 587
Swansea University Authors:
BEN JONES, Jacob Mitchell, Finn Monaghan, Mike Jennings , Owen Guy
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DOI (Published version): 10.4028/p-xd84zm
Abstract
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high...
Published in: | Materials Science Forum |
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ISSN: | 1662-9752 |
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Trans Tech Publications, Ltd.
2022
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URI: | https://cronfa.swan.ac.uk/Record/cronfa60613 |
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2022-08-15T14:04:51.0934381 v2 60613 2022-07-25 Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application 9c9c58d681517c977d63ca49276ad73e BEN JONES BEN JONES true false 522a9b94c350f5977584e0fd942facdc Jacob Mitchell Jacob Mitchell true false 5a628866e0e707d66c657b84e4ca8c9a Finn Monaghan Finn Monaghan true false e0ba5d7ece08cd70c9f8f8683996454a 0000-0003-3270-0805 Mike Jennings Mike Jennings true false c7fa5949b8528e048c5b978005f66794 0000-0002-6449-4033 Owen Guy Owen Guy true false 2022-07-25 In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design. Journal Article Materials Science Forum 1062 582 587 Trans Tech Publications, Ltd. 1662-9752 Automotive, Power Device, Reliability, Electric Vehicle, Trench Processing, FoundryCompatible, Trench Corner Rounding, Trench device simulation, ICP etch 31 5 2022 2022-05-31 10.4028/p-xd84zm COLLEGE NANME COLLEGE CODE Swansea University 2022-08-15T14:04:51.0934381 2022-07-25T08:43:13.4380264 Faculty of Science and Engineering School of Engineering and Applied Sciences - Chemistry BEN JONES 1 Jacob Mitchell 2 Jon Evans 3 Finn Monaghan 4 Mike Jennings 0000-0003-3270-0805 5 Chris Bolton 6 Kevin Riddel 7 Huma Ashraf 8 Owen Guy 0000-0002-6449-4033 9 60613__24922__055a0b42680247499222f5046f067486.pdf 60613.pdf 2022-08-15T13:53:16.6518062 Output 869819 application/pdf Version of Record true This article is an open access article under the terms and conditions of the Creative Commons Attribution (CC BY) license true eng https://creativecommons.org/licenses/by/4.0 |
title |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
spellingShingle |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application BEN JONES Jacob Mitchell Finn Monaghan Mike Jennings Owen Guy |
title_short |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
title_full |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
title_fullStr |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
title_full_unstemmed |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
title_sort |
Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
author_id_str_mv |
9c9c58d681517c977d63ca49276ad73e 522a9b94c350f5977584e0fd942facdc 5a628866e0e707d66c657b84e4ca8c9a e0ba5d7ece08cd70c9f8f8683996454a c7fa5949b8528e048c5b978005f66794 |
author_id_fullname_str_mv |
9c9c58d681517c977d63ca49276ad73e_***_BEN JONES 522a9b94c350f5977584e0fd942facdc_***_Jacob Mitchell 5a628866e0e707d66c657b84e4ca8c9a_***_Finn Monaghan e0ba5d7ece08cd70c9f8f8683996454a_***_Mike Jennings c7fa5949b8528e048c5b978005f66794_***_Owen Guy |
author |
BEN JONES Jacob Mitchell Finn Monaghan Mike Jennings Owen Guy |
author2 |
BEN JONES Jacob Mitchell Jon Evans Finn Monaghan Mike Jennings Chris Bolton Kevin Riddel Huma Ashraf Owen Guy |
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Journal article |
container_title |
Materials Science Forum |
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1062 |
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582 |
publishDate |
2022 |
institution |
Swansea University |
issn |
1662-9752 |
doi_str_mv |
10.4028/p-xd84zm |
publisher |
Trans Tech Publications, Ltd. |
college_str |
Faculty of Science and Engineering |
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facultyofscienceandengineering |
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Faculty of Science and Engineering |
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Faculty of Science and Engineering |
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School of Engineering and Applied Sciences - Chemistry{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Engineering and Applied Sciences - Chemistry |
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description |
In this paper we report the progress of our SiC trench etch development using enhanced ICP-based etch technology. Computer modelling of the electric field strength in the gate oxide as a function of corner geometry was used to illustrate trench corner rounding as an effective method to avoid to high gate oxide field strengths. This is an effort to examine a major ongoing issue in device reliability, and to govern future device design. |
published_date |
2022-05-31T04:18:52Z |
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1763754253713670144 |
score |
11.021648 |