No Cover Image

Journal article 1223 views

Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs

Karol Kalna Orcid Logo

Journal of Physics: Conference Series

Swansea University Author: Karol Kalna Orcid Logo

Full text not available from this repository: check for access using links below.

DOI (Published version): 10.1088/1742-6596/193/1/012122

Published in: Journal of Physics: Conference Series
Published: 2009
URI: https://cronfa.swan.ac.uk/Record/cronfa6067
Tags: Add Tag
No Tags, Be the first to tag this record!
first_indexed 2013-07-23T11:56:06Z
last_indexed 2018-02-09T04:33:12Z
id cronfa6067
recordtype SURis
fullrecord <?xml version="1.0"?><rfc1807><datestamp>2015-05-31T18:02:05.3958395</datestamp><bib-version>v2</bib-version><id>6067</id><entry>2013-09-03</entry><title>Effect of interface state trap density on the performance of scaled surface channel In&lt;sub&gt;0.3&lt;/sub&gt;Ga&lt;sub&gt;0.7&lt;/sub&gt;As MOSFETs</title><swanseaauthors><author><sid>1329a42020e44fdd13de2f20d5143253</sid><ORCID>0000-0002-6333-9189</ORCID><firstname>Karol</firstname><surname>Kalna</surname><name>Karol Kalna</name><active>true</active><ethesisStudent>false</ethesisStudent></author></swanseaauthors><date>2013-09-03</date><deptcode>EEEG</deptcode><abstract></abstract><type>Journal Article</type><journal>Journal of Physics: Conference Series</journal><publisher/><issnPrint/><issnElectronic/><keywords/><publishedDay>31</publishedDay><publishedMonth>12</publishedMonth><publishedYear>2009</publishedYear><publishedDate>2009-12-31</publishedDate><doi>10.1088/1742-6596/193/1/012122</doi><url/><notes></notes><college>COLLEGE NANME</college><department>Electronic and Electrical Engineering</department><CollegeCode>COLLEGE CODE</CollegeCode><DepartmentCode>EEEG</DepartmentCode><institution>Swansea University</institution><apcterm/><lastEdited>2015-05-31T18:02:05.3958395</lastEdited><Created>2013-09-03T06:36:00.0000000</Created><path><level id="1">Faculty of Science and Engineering</level><level id="2">School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering</level></path><authors><author><firstname>Karol</firstname><surname>Kalna</surname><orcid>0000-0002-6333-9189</orcid><order>1</order></author></authors><documents/><OutputDurs/></rfc1807>
spelling 2015-05-31T18:02:05.3958395 v2 6067 2013-09-03 Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs 1329a42020e44fdd13de2f20d5143253 0000-0002-6333-9189 Karol Kalna Karol Kalna true false 2013-09-03 EEEG Journal Article Journal of Physics: Conference Series 31 12 2009 2009-12-31 10.1088/1742-6596/193/1/012122 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2015-05-31T18:02:05.3958395 2013-09-03T06:36:00.0000000 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Karol Kalna 0000-0002-6333-9189 1
title Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
spellingShingle Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
Karol Kalna
title_short Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_full Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_fullStr Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_full_unstemmed Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
title_sort Effect of interface state trap density on the performance of scaled surface channel In<sub>0.3</sub>Ga<sub>0.7</sub>As MOSFETs
author_id_str_mv 1329a42020e44fdd13de2f20d5143253
author_id_fullname_str_mv 1329a42020e44fdd13de2f20d5143253_***_Karol Kalna
author Karol Kalna
author2 Karol Kalna
format Journal article
container_title Journal of Physics: Conference Series
publishDate 2009
institution Swansea University
doi_str_mv 10.1088/1742-6596/193/1/012122
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 0
active_str 0
published_date 2009-12-31T03:07:27Z
_version_ 1763749760794099712
score 11.035349

Similar Items