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An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules

Jixiang Tan, Zhongfu Zhou Orcid Logo

Energies, Volume: 16, Issue: 16, Start page: 5984

Swansea University Author: Zhongfu Zhou Orcid Logo

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DOI (Published version): 10.3390/en16165984

Abstract

This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semiconductor devices. As a relatively new device, the Si...

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Published in: Energies
ISSN: 1996-1073
Published: MDPI AG 2023
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URI: https://cronfa.swan.ac.uk/Record/cronfa64363
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spelling v2 64363 2023-09-04 An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules 614fc57cde2ee383718d4f4c462b5fba 0000-0002-0843-7253 Zhongfu Zhou Zhongfu Zhou true false 2023-09-04 EEEG This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semiconductor devices. As a relatively new device, the SiC MOSFET shines in the field of high power density and high-frequency switching; it has become a popular solution for electric vehicles and renewable energy conversion systems. However, the increase in voltage and current slope caused by high switching speeds inevitably increases the overshoot and oscillation in a circuit and can even generate additional losses. The principle of this new control strategy is to change the voltage and current in the turn-on and turn-off stages by changing the gate driver’s voltage. That is, we reduced the drive’s voltage after a certain time delay and maintained it for a period of time, thus directly controlling the slopes of di/dt and dv/dt. This study focused on the optimization of the SiC MOSFET by changing the time delay preceding the decrease in the voltage of the gate driver, analyzing and calculating the optimal time delay before the decrease in the voltage of the gate driver, and verifying the findings using LTspice simulation software. The simulated results were compared and analyzed with hard-switching strategies. The results showed that the proposed OSS can improve the switching performance of SiC MOSFETs. Journal Article Energies 16 16 5984 MDPI AG 1996-1073 Optimal-switching strategy; gate driver circuit; silicon carbide MOSFET; voltage and current overshoot; LTspice 15 8 2023 2023-08-15 10.3390/en16165984 http://dx.doi.org/10.3390/en16165984 COLLEGE NANME Electronic and Electrical Engineering COLLEGE CODE EEEG Swansea University 2023-10-10T14:32:49.4430043 2023-09-04T11:16:40.4982844 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Jixiang Tan 1 Zhongfu Zhou 0000-0002-0843-7253 2 64363__28431__cfc8820c29844c0d94f847e393c90ade.pdf 64363.pdf 2023-09-04T11:21:39.9742218 Output 4932770 application/pdf Version of Record true © 2023 by the authors. Licensee MDPI, Basel, Switzerland. Distributed under the terms of a Creative Commons Attribution 4.0 License (CC BY 4.0). true eng http://creativecommons.org/licenses/by/4.0/
title An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
spellingShingle An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
Zhongfu Zhou
title_short An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
title_full An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
title_fullStr An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
title_full_unstemmed An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
title_sort An Optimized Switching Strategy Based on Gate Drivers with Variable Voltage to Improve the Switching Performance of SiC MOSFET Modules
author_id_str_mv 614fc57cde2ee383718d4f4c462b5fba
author_id_fullname_str_mv 614fc57cde2ee383718d4f4c462b5fba_***_Zhongfu Zhou
author Zhongfu Zhou
author2 Jixiang Tan
Zhongfu Zhou
format Journal article
container_title Energies
container_volume 16
container_issue 16
container_start_page 5984
publishDate 2023
institution Swansea University
issn 1996-1073
doi_str_mv 10.3390/en16165984
publisher MDPI AG
college_str Faculty of Science and Engineering
hierarchytype
hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
url http://dx.doi.org/10.3390/en16165984
document_store_str 1
active_str 0
description This paper proposes an optimized switching strategy (OSS) based on a silicon carbide (SiC) MOSFET gate driver with variable voltage, which allows simultaneous variations in several different parameters to optimize the switching performance of semiconductor devices. As a relatively new device, the SiC MOSFET shines in the field of high power density and high-frequency switching; it has become a popular solution for electric vehicles and renewable energy conversion systems. However, the increase in voltage and current slope caused by high switching speeds inevitably increases the overshoot and oscillation in a circuit and can even generate additional losses. The principle of this new control strategy is to change the voltage and current in the turn-on and turn-off stages by changing the gate driver’s voltage. That is, we reduced the drive’s voltage after a certain time delay and maintained it for a period of time, thus directly controlling the slopes of di/dt and dv/dt. This study focused on the optimization of the SiC MOSFET by changing the time delay preceding the decrease in the voltage of the gate driver, analyzing and calculating the optimal time delay before the decrease in the voltage of the gate driver, and verifying the findings using LTspice simulation software. The simulated results were compared and analyzed with hard-switching strategies. The results showed that the proposed OSS can improve the switching performance of SiC MOSFETs.
published_date 2023-08-15T14:32:51Z
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score 11.012678

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