No Cover Image

Journal article 469 views

Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices / Owen, Guy

Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506

Swansea University Author: Owen, Guy

Full text not available from this repository: check for access using links below.

Check full text

DOI (Published version): 10.1063/1.3462932

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2010
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa5655
Tags: Add Tag
No Tags, Be the first to tag this record!
Item Description: This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates.
College: College of Engineering
Issue: 1
Start Page: 013506