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Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices

P. M Gammon, A Pérez-Tomás, M. R Jennings, O. J Guy, N Rimmer, J Llobet, N Mestres, P Godignon, M Placidi, M Zabala, J. A Covington, P. A Mawby, Owen Guy Orcid Logo

Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506

Swansea University Author: Owen Guy Orcid Logo

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DOI (Published version): 10.1063/1.3462932

Published in: Applied Physics Letters
ISSN: 0003-6951
Published: 2010
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Item Description: This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates.
College: Faculty of Science and Engineering
Issue: 1
Start Page: 013506