Journal article 1184 views
Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
P. M Gammon,
A Pérez-Tomás,
M. R Jennings,
O. J Guy,
N Rimmer,
J Llobet,
N Mestres,
P Godignon,
M Placidi,
M Zabala,
J. A Covington,
P. A Mawby,
Owen Guy 
Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506
Swansea University Author:
Owen Guy
Full text not available from this repository: check for access using links below.
DOI (Published version): 10.1063/1.3462932
Abstract
Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
| Published in: | Applied Physics Letters |
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| ISSN: | 0003-6951 |
| Published: |
2010
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| Online Access: |
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| URI: | https://cronfa.swan.ac.uk/Record/cronfa5655 |
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| Item Description: |
This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates. |
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| College: |
Faculty of Science and Engineering |
| Issue: |
1 |
| Start Page: |
013506 |