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Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices / P. M Gammon; A Pérez-Tomás; M. R Jennings; O. J Guy; N Rimmer; J Llobet; N Mestres; P Godignon; M Placidi; M Zabala; J. A Covington; P. A Mawby; Owen Guy
Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506
Swansea University Author: Owen, Guy
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Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices
|Published in:||Applied Physics Letters|
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This paper is one of 18 publications produced as part of the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, commenced ran from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology. The paper decribes the interfacial behaviour of key new dielectric materials - applied as SiC gates.
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