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Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding / M. R Jennings; A Pérez-Tomás; O. J Guy; R Hammond; S. E Burrows; P. M Gammon; M Lodzinski; J. A Covington; P. A Mawby; Owen Guy
Electrochemical and Solid-State Letters, Volume: 11, Issue: 11, Pages: H306 - H308
Swansea University Author: Owen, Guy
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Si∕SiC Heterojunctions Fabricated by Direct Wafer Bonding
|Published in:||Electrochemical and Solid-State Letters|
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This paper is one of 18 publications producedunder the DTI technology programme project "INTRINSiC" (Interactive Research in Silicon Carbide). This 3 year £1.1m project, running from 2006-2009, and involved six industrial and two academic partners. INTRINSIC is developing novel silicon carbide device technology.It describes important developments in silicon carbide technology - super-smooth surfaces. Using this new technology gives a 10-fold improvement in surface quality improving device performance, relative to conventional devices. This process technology is being adopted by industry and has led to further collaborative projects with Pure Wafer Ltd via the European Social Fund.
College of Engineering