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Integration of HfO[sub 2] on Si/SiC heterojunctions for the gate architecture of SiC power devices / Owen, Guy

Applied Physics Letters, Volume: 97, Issue: 1, Start page: 013506

Swansea University Author: Owen, Guy

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DOI (Published version): 10.1063/1.3462932

Published in: Applied Physics Letters
Published: 2010
URI: https://cronfa.swan.ac.uk/Record/cronfa19747
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College: College of Engineering
Issue: 1
Start Page: 013506