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Room temperature quantum emitters in aluminum nitride epilayers on silicon

Joseph K. Cannon Orcid Logo, Sam G. Bishop Orcid Logo, Katie M. Eggleton Orcid Logo, Huseyin B. Yağcı Orcid Logo, Rachel N. Clark Orcid Logo, Sherif R. Ibrahim Orcid Logo, John P. Hadden Orcid Logo, Saptarsi Ghosh Orcid Logo, Menno J. Kappers Orcid Logo, Rachel A. Oliver Orcid Logo, Anthony J. Bennett Orcid Logo

Applied Physics Letters, Volume: 124, Issue: 24

Swansea University Author: Saptarsi Ghosh Orcid Logo

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DOI (Published version): 10.1063/5.0207744

Abstract

Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy conta...

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Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2024
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URI: https://cronfa.swan.ac.uk/Record/cronfa66863
first_indexed 2024-07-04T16:50:07Z
last_indexed 2024-11-25T14:19:02Z
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spelling 2024-07-08T14:27:27.5489373 v2 66863 2024-06-23 Room temperature quantum emitters in aluminum nitride epilayers on silicon 3e247ecabd6eddd319264d066b0ce959 0000-0003-1685-6228 Saptarsi Ghosh Saptarsi Ghosh true false 2024-06-23 ACEM Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing. Journal Article Applied Physics Letters 124 24 AIP Publishing 0003-6951 1077-3118 10 6 2024 2024-06-10 10.1063/5.0207744 COLLEGE NANME Aerospace, Civil, Electrical, and Mechanical Engineering COLLEGE CODE ACEM Swansea University Another institution paid the OA fee We acknowledge financial support provided by EPSRC via Grant Nos. EP/T017813/1, EP/03982X/1, and EP/X015300/1 and the European Union’s H2020 Marie Curie ITN project LasIonDef (Grant No. 956387). RC was supported by Grant No. EP/S024441/1, Cardiff University and the National Physical Laboratory. We thank Ceri Thorne for proof reading. 2024-07-08T14:27:27.5489373 2024-06-23T19:45:53.1907685 Faculty of Science and Engineering School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering Joseph K. Cannon 0000-0002-7860-1290 1 Sam G. Bishop 0000-0001-6353-6601 2 Katie M. Eggleton 0009-0003-9958-9766 3 Huseyin B. Yağcı 0000-0002-8992-2292 4 Rachel N. Clark 0000-0002-6623-1499 5 Sherif R. Ibrahim 0000-0001-5342-901x 6 John P. Hadden 0000-0001-5407-6754 7 Saptarsi Ghosh 0000-0003-1685-6228 8 Menno J. Kappers 0000-0002-6566-0742 9 Rachel A. Oliver 0000-0003-0029-3993 10 Anthony J. Bennett 0000-0002-5386-3710 11 66863__30844__bdc53e7f0a954b4fb94b0145d76cb40b.pdf 66863.VoR.pdf 2024-07-08T14:24:19.1972877 Output 2668406 application/pdf Version of Record true 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercialNoDerivs 4.0 International (CC BY-NC-ND) license. true eng https://creativecommons.org/licenses/by-nc-nd/4.0/
title Room temperature quantum emitters in aluminum nitride epilayers on silicon
spellingShingle Room temperature quantum emitters in aluminum nitride epilayers on silicon
Saptarsi Ghosh
title_short Room temperature quantum emitters in aluminum nitride epilayers on silicon
title_full Room temperature quantum emitters in aluminum nitride epilayers on silicon
title_fullStr Room temperature quantum emitters in aluminum nitride epilayers on silicon
title_full_unstemmed Room temperature quantum emitters in aluminum nitride epilayers on silicon
title_sort Room temperature quantum emitters in aluminum nitride epilayers on silicon
author_id_str_mv 3e247ecabd6eddd319264d066b0ce959
author_id_fullname_str_mv 3e247ecabd6eddd319264d066b0ce959_***_Saptarsi Ghosh
author Saptarsi Ghosh
author2 Joseph K. Cannon
Sam G. Bishop
Katie M. Eggleton
Huseyin B. Yağcı
Rachel N. Clark
Sherif R. Ibrahim
John P. Hadden
Saptarsi Ghosh
Menno J. Kappers
Rachel A. Oliver
Anthony J. Bennett
format Journal article
container_title Applied Physics Letters
container_volume 124
container_issue 24
publishDate 2024
institution Swansea University
issn 0003-6951
1077-3118
doi_str_mv 10.1063/5.0207744
publisher AIP Publishing
college_str Faculty of Science and Engineering
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hierarchy_top_id facultyofscienceandengineering
hierarchy_top_title Faculty of Science and Engineering
hierarchy_parent_id facultyofscienceandengineering
hierarchy_parent_title Faculty of Science and Engineering
department_str School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering{{{_:::_}}}Faculty of Science and Engineering{{{_:::_}}}School of Aerospace, Civil, Electrical, General and Mechanical Engineering - Electronic and Electrical Engineering
document_store_str 1
active_str 0
description Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing.
published_date 2024-06-10T05:30:50Z
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