No Cover Image

Journal article 48 views 12 downloads

Room temperature quantum emitters in aluminum nitride epilayers on silicon

Joseph K. Cannon Orcid Logo, Sam G. Bishop Orcid Logo, Katie M. Eggleton Orcid Logo, Huseyin B. Yağcı Orcid Logo, Rachel N. Clark Orcid Logo, Sherif R. Ibrahim Orcid Logo, John P. Hadden Orcid Logo, Saptarsi Ghosh Orcid Logo, Menno J. Kappers Orcid Logo, Rachel A. Oliver Orcid Logo, Anthony J. Bennett Orcid Logo

Applied Physics Letters, Volume: 124, Issue: 24

Swansea University Author: Saptarsi Ghosh Orcid Logo

  • 66863.VoR.pdf

    PDF | Version of Record

    2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution-NonCommercialNoDerivs 4.0 International (CC BY-NC-ND) license.

    Download (2.54MB)

Check full text

DOI (Published version): 10.1063/5.0207744

Abstract

Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy conta...

Full description

Published in: Applied Physics Letters
ISSN: 0003-6951 1077-3118
Published: AIP Publishing 2024
Online Access: Check full text

URI: https://cronfa.swan.ac.uk/Record/cronfa66863
Tags: Add Tag
No Tags, Be the first to tag this record!
Abstract: Room temperature quantum emitters have been reported in aluminum nitride grown on sapphire, but until now they have not been observed in epilayers grown on silicon. We report that epitaxial aluminum nitride grown on silicon by either plasma vapor deposition or metal-organic vapor phase epitaxy contains point-like emitters in the red to near-infrared part of the spectrum. We study the photon statistics and polarization of emission at a wavelength of 700–750 nm, showing signatures of quantized electronic states under pulsed and CW optical excitation. The discovery of quantum emitters in a material deposited directly on silicon can drive integration using industry standard 300 mm wafers, established complementary metal-oxide-semiconductor control electronics, and low marginal-cost mass-manufacturing.
College: Faculty of Science and Engineering
Funders: We acknowledge financial support provided by EPSRC via Grant Nos. EP/T017813/1, EP/03982X/1, and EP/X015300/1 and the European Union’s H2020 Marie Curie ITN project LasIonDef (Grant No. 956387). RC was supported by Grant No. EP/S024441/1, Cardiff University and the National Physical Laboratory. We thank Ceri Thorne for proof reading.
Issue: 24